TPS54810
SLVS420B − MARCH 2002 − R EVISED FEBRUARY 2005
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4

ELECTRICAL CHARACTERISTICS CONTINUED

TJ = −40°C to 125°C, VI = 4 V to 6 V unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain 1 kΩ COMP to AGND(1) 90 110 dB
Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND(1) 3 5 MHz
Error amplifier common mode input voltage
range Powered by internal LDO(1) 0 VBIAS V
Input bias current, VSENSE VSENSE = Vref 60 250 nA
Output voltage slew rate (symmetric), COMP 1.0 1.4 V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding dead-
time)
10-mV overdrive(1) 70 85 ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V
Enable hysteresis voltage, SS/ENA (1) 0.03 V
Falling edge deglitch, SS/ENA (1) 2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 1.3 V, VI = 1.5 V 1.5 2.3 4.0 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %Vref
Power good hysteresis voltage(1) 3 %Vref
Power good falling edge deglitch(1) 35 µs
Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V
Leakage current, PWRGD VI = 3.6 V 1µA
CURRENT LIMIT
Current limit
VI = 4.5 V(1), output shorted 911
A
Current limit VI = 6 V(1), output shorted 10 12 A
Current limit leading edge blanking time 100 ns
Current limit total response time 200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point(1) 135 150 165 _C
Thermal shutdown hysteresis(1) 10 _C
OUTPUT POWER MOSFETS
P MOSFET it h
VI = 6 V(2) 26 47
Ω
rDS(on) Power MOSFET switches VI = 4.5 V(2) 30 60 mΩ
(1) Specified by design
(2) Matched MOSFETs, low-side rDS(on) production tested, high-side rDS(on) production tested.