Texas Instruments TPS54810 Parameter Test Conditions MIN TYP MAX Unit Error Amplifier, Power Good

TPS54810					www.ti.com
SLVS420B − MARCH 2002 − R EVISED FEBRUARY 2005
ELECTRICAL CHARACTERISTICS CONTINUED
TJ = −40°C to 125°C, VI = 4 V to 6 V unless otherwise noted
	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
ERROR AMPLIFIER
	Error amplifier open loop voltage gain	1 kΩ COMP to AGND(1)	90	110		dB
	Error amplifier unity gain bandwidth	Parallel 10 kΩ, 160 pF COMP to AGND(1)	3	5		MHz
	Error amplifier common mode input voltage	Powered by internal LDO(1)	0		VBIAS	V
	range
	Input bias current, VSENSE	VSENSE = Vref		60	250	nA
	Output voltage slew rate (symmetric), COMP		1.0	1.4		V/∝s
PWM COMPARATOR
	PWM comparator propagation delay time, PWM	10-mV overdrive(1)
	comparator input to PH pin (excluding dead-			70	85	ns
	time)
SLOW-START/ENABLE
	Enable threshold voltage, SS/ENA		0.82	1.20	1.40	V
	Enable hysteresis voltage, SS/ENA (1)			0.03		V
	Falling edge deglitch, SS/ENA (1)			2.5		∝s
	Internal slow-start time		2.6	3.35	4.1	ms
	Charge current, SS/ENA	SS/ENA = 0V	3	5	8	∝A
	Discharge current, SS/ENA	SS/ENA = 1.3 V, VI = 1.5 V	1.5	2.3	4.0	mA
POWER GOOD
	Power good threshold voltage	VSENSE falling		90		%Vref
	Power good hysteresis voltage(1)			3		%V
						ref
	Power good falling edge deglitch(1)			35		∝s
	Output saturation voltage, PWRGD	I(sink) = 2.5 mA		0.18	0.3	V
	Leakage current, PWRGD	VI = 3.6 V			1	∝A
CURRENT LIMIT
		V = 4.5 V(1), output shorted	9	11
	Current limit	I				A
		V = 6 V(1), output shorted	10	12
		I
	Current limit leading edge blanking time			100		ns
	Current limit total response time			200		ns
THERMAL SHUTDOWN
	Thermal shutdown trip point(1)		135	150	165	_C
	Thermal shutdown hysteresis(1)			10		_C
OUTPUT POWER MOSFETS
		V = 6 V(2)		26	47
rDS(on)	Power MOSFET switches	I				mΩ
		V = 4.5 V(2)		30	60
		I

(1)Specified by design

(2)Matched MOSFETs, low-side rDS(on) production tested, high-side rDS(on) production tested.

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