Cypress CY62136EV30 manual ns Parameter Description Unit Min Max Read Cycle, Write Cycle

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CY62136EV30

MoBL®

Switching Characteristics Over the Operating Range [10, 11, 12, 13]

 

 

 

 

 

 

 

 

 

 

45 ns

 

Parameter

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

Min.

 

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

 

ns

tAA

 

Address to Data Valid

 

 

45

ns

tOHA

 

Data Hold from Address Change

10

 

 

ns

tACE

 

 

 

 

LOW to Data Valid

 

 

45

ns

CE

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

22

ns

OE

 

tLZOE

 

 

 

 

LOW to LOW Z[11]

5

 

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High Z[11, 12]

 

 

18

ns

OE

 

t

 

 

 

LOW to Low Z[11]

10

 

 

ns

CE

 

 

LZCE

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

HIGH to High Z[11, 12]

 

 

18

ns

CE

 

HZCE

 

 

 

 

 

 

 

 

 

 

 

 

tPU

 

 

 

LOW to Power-Up

0

 

 

ns

CE

 

 

tPD

 

 

 

HIGH to Power-Down

 

 

45

ns

CE

 

tDBE

 

 

 

 

 

 

 

 

 

 

22

ns

BLE/BHE LOW to Data Valid

 

tLZBE

 

 

 

 

 

 

 

 

5

 

 

ns

BLE/BHE LOW to Low Z[11]

 

 

tHZBE

 

 

 

 

 

 

 

 

 

 

18

ns

BLE/BHE HIGH to HIGH Z[11, 12]

 

Write Cycle[13]

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

 

ns

tSCE

 

 

 

LOW to Write End

35

 

 

ns

CE

 

 

tAW

 

Address Set-Up to Write End

35

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

ns

tSA

 

Address Set-Up to Write Start

0

 

 

ns

tPWE

 

 

 

 

Pulse Width

35

 

 

ns

WE

 

 

tBW

 

 

 

 

 

 

 

 

35

 

 

ns

BLE/BHE LOW to Write End

 

 

tSD

 

Data Set-Up to Write End

25

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

ns

t

 

 

 

 

LOW to High-Z[11, 12]

 

 

18

ns

WE

 

HZWE

 

 

 

 

 

 

 

 

 

 

 

 

tLZWE

 

 

 

 

HIGH to Low-Z[11]

10

 

 

ns

WE

 

 

Notes:

10.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.

11.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedence state.

13.The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.

Document #: 38-05569 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Product Portfolio4 Pin Configuration2Vfbga Top View Tsop II Top View MaxOperating Range7 Electrical Characteristics Over the Operating Range 5, 6Maximum Ratings Thermal Resistance8 Data Retention Characteristics Over the Operating Range8AC Test Loads and Waveforms Data Retention WaveformWrite Cycle 45 ns Parameter Description Unit Min Max Read CycleRead Cycle No OE Controlled15 Switching Waveforms 14Read Cycle 1 Address Transition Controlled14 Data I/O Write Cycle No WE Controlled13, 17Write Cycle No CE Controlled13, 17 DATAI/O Data Write Cycle No WE Controlled, OE LOW18Write Cycle No BHE/BLE Controlled, OE LOW18 Ordering Code Package Package Type Operating Diagram Range Inputs/Outputs Mode PowerOrdering Information BHE BLEPin Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II REV ECN no Issue Date Orig. Description of ChangeDocument History