Cypress CY62136EV30 manual Maximum Ratings, Operating Range7

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CY62136EV30 MoBL®

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

 

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

 

 

 

Potential

–0.3V to 3.9V

(VCC MAX + 0.3V)

DC Voltage Applied to Outputs

 

 

 

in High-Z State[5,6]

–0.3V to 3.9V

(V

CC MAX

+ 0.3V)

 

 

 

 

DC Input Voltage[5,6]

............ –0.3V to 3.9V (VCC MAX + 0.3V)

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

 

> 200 mA

Operating Range[7]

 

 

 

 

 

Ambient

VCC[7]

Device

 

Range

Temperature

CY62136EV30LL

 

Industrial

–40°C to +85°C

2.2V - 3.6V

 

 

 

 

 

Electrical Characteristics Over the Operating Range [5, 6, 7]

 

 

 

 

 

 

 

 

 

 

45 ns

 

 

Parameter

Description

 

 

 

 

Test Conditions

 

 

 

Unit

 

 

 

 

Min.

Typ.[4]

Max.

VOH

Output HIGH

 

IOH = –0.1 mA

 

VCC = 2.20V

2.0

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

IOH = –1.0 mA

 

VCC = 2.70V

2.4

 

 

V

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 0.1 mA

 

VCC = 2.20V

 

 

0.4

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

IOL = 2.1mA

 

VCC = 2.70V

 

 

0.4

V

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

VCC = 2.2V to 2.7V

1.8

 

VCC + 0.3

V

 

 

 

VCC= 2.7V to 3.6V

2.2

 

VCC + 0.3

V

VIL

Input LOW Voltage

 

VCC = 2.2V to 2.7V

–0.3

 

0.6

V

 

 

 

VCC= 2.7V to 3.6V

–0.3

 

0.8

V

IIX

Input Leakage

 

GND < VI < VCC

 

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fMAX = 1/tRC

 

VCC = VCCmax, IOUT = 0 mA

 

15

20

mA

 

Supply Current

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

f = 1 MHz

 

 

 

2

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

Automatic CE

 

 

> VCC0.2V,

 

 

1

7

A

CE

 

 

 

Power-down

 

VIN>VCC–0.2V, VIN<0.2V)

 

 

 

 

 

Current — CMOS

 

f = fMAX

(Address and Data Only),

 

 

 

 

 

Inputs

 

f = 0 (OE, and WE),

 

 

 

 

 

 

 

VCC = 3.60V

 

 

 

 

 

ISB2

Automatic CE

 

 

> VCC

– 0.2V,

 

 

1

7

A

CE

 

 

 

Power-down

 

VIN > VCC

– 0.2V or VIN < 0.2V, f = 0,

 

 

 

 

 

Current — CMOS

 

VCC = 3.60V

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

 

 

Capacitance (for all packages)[8]

Parameter

Description

Test Conditions

Max.

Unit

 

 

 

 

 

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

 

Notes:

5.VIL(min.) = –2.0V for pulse durations less than 20 ns.

6.VIH(max)=VCC+0.75V for pulse durations less than 20ns.

7.Full Device AC operation assumes a 100 s ramp time from 0 to Vcc(min) and 200 s wait time after VCC stabilization.

8.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05569 Rev. *B

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Contents Features Logic Block DiagramCypress Semiconductor Corporation Max Pin Configuration2Product Portfolio4 Vfbga Top View Tsop II Top ViewElectrical Characteristics Over the Operating Range 5, 6 Maximum RatingsOperating Range7 Data Retention Waveform Data Retention Characteristics Over the Operating Range8Thermal Resistance8 AC Test Loads and WaveformsWrite Cycle 45 ns Parameter Description Unit Min Max Read CycleSwitching Waveforms 14 Read Cycle 1 Address Transition Controlled14Read Cycle No OE Controlled15 Write Cycle No WE Controlled13, 17 Write Cycle No CE Controlled13, 17Data I/O Write Cycle No WE Controlled, OE LOW18 Write Cycle No BHE/BLE Controlled, OE LOW18DATAI/O Data BHE BLE Inputs/Outputs Mode PowerOrdering Code Package Package Type Operating Diagram Range Ordering InformationPin Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II Issue Date Orig. Description of Change Document HistoryREV ECN no