Cypress CY62137FV30 Thermal Resistance, AC Test Loads and Waveforms, Data Retention Waveform

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CY62137FV30 MoBL®

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

VFBGA

TSOP II

Unit

ΘJA

Thermal Resistance

Still air, soldered on a 3 × 4.5 inch,

75

77

°C/W

 

(Junction to Ambient)

two layer printed circuit board

 

 

 

ΘJC

Thermal Resistance

 

10

13

°C/W

 

(Junction to Case)

 

 

 

 

AC Test Loads and Waveforms

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

 

Figure 3. AC Test Loads and Waveform

 

 

 

 

 

 

VCC

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

90%

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R2

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise Time = 1 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

Fall Time = 1 V/ns

Equivalent to: THÉVENIN EQUIVALENT

RTH

OUTPUT V

Parameters

2.5V (2.2V to 2.7V)

3.0V (2.7V to 3.6V)

Unit

R1

16667

1103

Ω

 

 

 

 

R2

15385

1554

Ω

 

 

 

 

RTH

8000

645

Ω

VTH

1.20

1.75

V

Data Retention Characteristics

Over the Operating Range

Parameter

Description

 

 

Conditions

 

Min

Typ [1]

Max

Unit

VDR

VCC for Data Retention

 

 

 

 

1.5

 

 

V

ICCDR [7]

Data Retention Current

VCC = 1.5V,

 

> VCC - 0.2V,

Ind’l/Auto-A

 

 

4

μA

CE

 

 

VIN > VCC - 0.2V or VIN < 0.2V

 

 

 

 

 

 

 

Auto-E

 

 

12

 

tCDR [8]

Chip Deselect to Data Retention Time

 

 

 

 

0

 

 

ns

tR [9]

Operation Recovery Time

 

 

 

 

tRC

 

 

ns

Data Retention Waveform

Figure 4. Data Retention Waveform [10]

 

 

 

 

VCC(min)

DATA RETENTION MODE

VCC(min)

VCC

VDR > 1.5V

CE or

tCDR

 

tR

 

 

 

BHE.BLE

 

 

 

Notes

8.Tested initially and after any design or process changes that may affect these parameters.

9.Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

10.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.

Document Number: 001-07141 Rev. *F

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configuration Product PortfolioMin Max TypElectrical Characteristics Maximum RatingsCapacitance Device Range AmbientData Retention Characteristics Thermal ResistanceAC Test Loads and Waveforms Data Retention WaveformSwitching Characteristics Address Switching WaveformsData OUT Previous Data Valid Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW Truth Table Inputs or Outputs Mode PowerBHE BLE Package Diagram CY62137FV30LL-45BVI 51-85150 Ball VfbgaPin Tsop Document History Issue Orig. Date Change Description of ChangeREV ECN no

CY62137FV30 specifications

The Cypress CY62137FV30 is a high-performance SRAM (Static Random Access Memory) device designed for high-speed applications. It features a 4-Mbit memory capacity organized into a 512K x 8-bit configuration, making it suitable for a wide range of embedded systems, computing, and communication applications.

One of the standout features of the CY62137FV30 is its fast access time, with speeds as low as 30 ns. This rapid response capability is essential for applications requiring fast data retrieval, such as telecommunications equipment, automotive systems, and consumer electronics where performance is critical. The device also supports a wide operating voltage range from 2.7V to 3.6V, providing flexibility for use in various power-sensitive applications.

In terms of packaging, the CY62137FV30 is available in compact form factors, allowing for designs with space constraints. It comes in standard packages such as TSOPII and SOJ, which are well-regarded in the industry for ease of integration into circuit boards.

The CY62137FV30 employs advanced CMOS technology, ensuring low power consumption while maintaining high-speed performance. This is particularly beneficial in battery-operated devices where power efficiency is a priority. The device offers both read and write cycles, allowing for seamless data operations. Additionally, the SRAM architecture supports asynchronous operations, allowing users to access memory without the need for a clock signal.

The memory is designed with built-in write protection features, enhancing data integrity during critical operations. It is compatible with various standard memory interfaces, making it easy to integrate into different system architectures. Moreover, the device can endure a significant number of read and write cycles, ensuring durability and reliability over extended use.

The CY62137FV30 also features a simple interface, with easy-to-use control signals, which facilitate straightforward integration and design flexibility. Its ability to handle dynamic data and provide quick access to stored information makes it an excellent choice for applications like networking equipment, industrial automation, and high-performance computing systems.

In summary, the Cypress CY62137FV30 is a versatile SRAM solution that combines high speed, low power consumption, and compact packaging. Its innovative technology and reliable performance make it an excellent choice for various applications requiring efficient and fast memory solutions.