Cypress CY62137FV30 manual Switching Characteristics

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CY62137FV30 MoBL®

Switching Characteristics

Over the Operating Range [11, 12]

Parameter

 

 

 

 

 

 

 

Description

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

 

 

 

 

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

55

 

ns

tAA

 

Address to Data Valid

 

45

 

55

ns

tOHA

 

Data Hold From Address Change

10

 

10

 

ns

tACE

 

 

 

 

LOW to Data Valid

 

45

 

55

ns

CE

 

 

tDOE

 

 

 

 

LOW to Data Valid

 

22

 

25

ns

OE

 

 

tLZOE

 

 

 

 

LOW to Low Z [13]

5

 

5

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High Z [13, 14]

 

18

 

20

ns

OE

 

 

tLZCE

 

 

 

LOW to Low Z [13]

10

 

10

 

ns

CE

 

 

tHZCE

 

 

 

HIGH to High Z [13, 14]

 

18

 

20

ns

CE

 

 

tPU

 

 

 

LOW to Power Up

0

 

0

 

ns

CE

 

 

tPD

 

 

 

HIGH to Power Down

 

45

 

55

ns

CE

 

 

tDBE

 

 

 

 

 

 

 

 

 

45

 

55

ns

BLE/BHE LOW to Data Valid

 

 

tLZBE

 

 

 

 

 

 

 

 

5

 

10

 

ns

BLE/BHE LOW to Low Z [13, 15]

 

 

tHZBE

 

 

 

 

 

 

 

 

 

18

 

20

ns

BLE/BHE HIGH to High Z [13, 14]

 

 

Write Cycle [16]

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

55

 

ns

tSCE

 

 

 

LOW to Write End

35

 

40

 

ns

CE

 

 

tAW

 

Address Setup to Write End

35

 

40

 

ns

tHA

 

Address Hold from Write End

0

 

0

 

ns

tSA

 

Address Setup to Write Start

0

 

0

 

ns

tPWE

 

 

 

 

Pulse Width

35

 

40

 

ns

WE

 

 

tBW

 

 

 

 

 

 

 

 

35

 

40

 

ns

BLE/BHE LOW to Write End

 

 

tSD

 

Data Setup to Write End

25

 

25

 

ns

tHD

 

Data Hold From Write End

0

 

0

 

ns

tHZWE

 

 

 

 

LOW to High Z [13, 14]

 

18

 

20

ns

WE

 

 

tLZWE

 

 

 

 

HIGH to Low Z [13]

10

 

10

 

ns

WE

 

 

Notes

11.Test conditions for all parameters, other than tri-state parameters, assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.

12.AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. Please see application note AN13842 for further clarification.

13.At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

14.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.

15.If both byte enables are toggled together, this value is 10 ns.

16.The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals are ACTIVE to initiate a write and any of these signals terminate a write by going INACTIVE. The data input setup and hold timing are referenced to the edge of the signal that terminates the write.

Document Number: 001-07141 Rev. *F

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin ConfigurationMin Max TypMaximum Ratings Electrical CharacteristicsCapacitance Device Range AmbientThermal Resistance Data Retention CharacteristicsAC Test Loads and Waveforms Data Retention WaveformSwitching Characteristics Data OUT Previous Data Valid Switching WaveformsAddress Write Cycle 2 CE Controlled 16, 20 Write Cycle 1 WE Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW BHE BLE Inputs or Outputs Mode PowerTruth Table CY62137FV30LL-45BVI 51-85150 Ball Vfbga Package DiagramPin Tsop REV ECN no Issue Orig. Date Change Description of ChangeDocument History

CY62137FV30 specifications

The Cypress CY62137FV30 is a high-performance SRAM (Static Random Access Memory) device designed for high-speed applications. It features a 4-Mbit memory capacity organized into a 512K x 8-bit configuration, making it suitable for a wide range of embedded systems, computing, and communication applications.

One of the standout features of the CY62137FV30 is its fast access time, with speeds as low as 30 ns. This rapid response capability is essential for applications requiring fast data retrieval, such as telecommunications equipment, automotive systems, and consumer electronics where performance is critical. The device also supports a wide operating voltage range from 2.7V to 3.6V, providing flexibility for use in various power-sensitive applications.

In terms of packaging, the CY62137FV30 is available in compact form factors, allowing for designs with space constraints. It comes in standard packages such as TSOPII and SOJ, which are well-regarded in the industry for ease of integration into circuit boards.

The CY62137FV30 employs advanced CMOS technology, ensuring low power consumption while maintaining high-speed performance. This is particularly beneficial in battery-operated devices where power efficiency is a priority. The device offers both read and write cycles, allowing for seamless data operations. Additionally, the SRAM architecture supports asynchronous operations, allowing users to access memory without the need for a clock signal.

The memory is designed with built-in write protection features, enhancing data integrity during critical operations. It is compatible with various standard memory interfaces, making it easy to integrate into different system architectures. Moreover, the device can endure a significant number of read and write cycles, ensuring durability and reliability over extended use.

The CY62137FV30 also features a simple interface, with easy-to-use control signals, which facilitate straightforward integration and design flexibility. Its ability to handle dynamic data and provide quick access to stored information makes it an excellent choice for applications like networking equipment, industrial automation, and high-performance computing systems.

In summary, the Cypress CY62137FV30 is a versatile SRAM solution that combines high speed, low power consumption, and compact packaging. Its innovative technology and reliable performance make it an excellent choice for various applications requiring efficient and fast memory solutions.