Cypress CY62137FV30 manual Switching Waveforms, Address, Data OUT Previous Data Valid

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CY62137FV30 MoBL®

Switching Waveforms

Figure 5. Read Cycle 1: Address Transition Controlled [17, 18]

tRC

ADDRESS

tOHA tAA

DATA OUT

PREVIOUS DATA VALID

 

 

 

 

DATA VALID

 

 

 

 

Figure 6. Read Cycle 2: OE Controlled [18, 19]

ADDRESS

 

 

CE

 

tRC

 

 

 

 

tPD

 

t

tHZCE

 

ACE

 

OE

 

 

 

tDOE

tHZOE

 

 

BHE/BLE

tLZOE

 

 

 

 

tDBE

tHZBE

 

 

 

tLZBE

HIGH

DATA OUT

HIGHIMPEDANCE

IMPEDANCE

tLZCE

DATA VALID

 

 

 

tPU

ICC

VCC

 

50%

50%

SUPPLY

 

ISB

CURRENT

 

 

Notes

17.The device is continuously selected. OE, CE = VIL, BHE and/or BLE = VIL.

18.WE is HIGH for read cycle.

19.Address valid before or similar to CE and BHE, BLE transition LOW.

Document Number: 001-07141 Rev. *F

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtMin Pin ConfigurationProduct Portfolio Max TypCapacitance Electrical CharacteristicsMaximum Ratings Device Range AmbientAC Test Loads and Waveforms Data Retention CharacteristicsThermal Resistance Data Retention WaveformSwitching Characteristics Switching Waveforms AddressData OUT Previous Data Valid Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW Inputs or Outputs Mode Power Truth TableBHE BLE Package Diagram CY62137FV30LL-45BVI 51-85150 Ball VfbgaPin Tsop Issue Orig. Date Change Description of Change Document HistoryREV ECN no

CY62137FV30 specifications

The Cypress CY62137FV30 is a high-performance SRAM (Static Random Access Memory) device designed for high-speed applications. It features a 4-Mbit memory capacity organized into a 512K x 8-bit configuration, making it suitable for a wide range of embedded systems, computing, and communication applications.

One of the standout features of the CY62137FV30 is its fast access time, with speeds as low as 30 ns. This rapid response capability is essential for applications requiring fast data retrieval, such as telecommunications equipment, automotive systems, and consumer electronics where performance is critical. The device also supports a wide operating voltage range from 2.7V to 3.6V, providing flexibility for use in various power-sensitive applications.

In terms of packaging, the CY62137FV30 is available in compact form factors, allowing for designs with space constraints. It comes in standard packages such as TSOPII and SOJ, which are well-regarded in the industry for ease of integration into circuit boards.

The CY62137FV30 employs advanced CMOS technology, ensuring low power consumption while maintaining high-speed performance. This is particularly beneficial in battery-operated devices where power efficiency is a priority. The device offers both read and write cycles, allowing for seamless data operations. Additionally, the SRAM architecture supports asynchronous operations, allowing users to access memory without the need for a clock signal.

The memory is designed with built-in write protection features, enhancing data integrity during critical operations. It is compatible with various standard memory interfaces, making it easy to integrate into different system architectures. Moreover, the device can endure a significant number of read and write cycles, ensuring durability and reliability over extended use.

The CY62137FV30 also features a simple interface, with easy-to-use control signals, which facilitate straightforward integration and design flexibility. Its ability to handle dynamic data and provide quick access to stored information makes it an excellent choice for applications like networking equipment, industrial automation, and high-performance computing systems.

In summary, the Cypress CY62137FV30 is a versatile SRAM solution that combines high speed, low power consumption, and compact packaging. Its innovative technology and reliable performance make it an excellent choice for various applications requiring efficient and fast memory solutions.