Cypress CY62137FV30 manual Product Portfolio, Pin Configuration, Min, Max Typ

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CY62137FV30 MoBL®

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Product Portfolio

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Power Dissipation

 

 

 

Product

Range

VCC Range (V)

Speed

 

Operating ICC (mA)

 

 

Standby ISB2

 

 

 

 

 

 

 

(ns)

f = 1MHz

 

f = fmax

 

(μA)

 

 

 

 

 

Min

Typ [1]

Max

 

Typ [1]

 

Max

 

Typ [1]

 

Max

 

Typ [1]

 

Max

CY62137FV30LL

Ind’l/Auto-A

2.2V

3.0V

3.6V

45

1.6

 

2.5

 

13

 

18

 

1

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E

2.2V

3.0V

3.6V

55

2

 

3

 

15

 

25

 

1

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Configuration

Figure 1. 48-Ball VFBGA Pinout [2, 3]

1

2

3

4

5

6

 

BLE

OE

A0

A1

A2

NC

A

IO8

BHE

A3

A4

CE

IO0

B

IO9

IO10

A5

A6

IO1

IO2

C

VSS

IO11

NC

A7

IO3

VCC

D

VCC

IO12

NC

A16

IO4

VSS

E

IO14

IO13

A14

A15

IO5

IO6

F

IO15

NC

A12

A13

WE

IO7

G

NC

A8

A9

A10

A11

NC

H

Figure 2. 44-Pin TSOP II [2]

 

 

A4

 

1

44

 

 

A5

 

 

 

 

A3

 

2

43

 

A6

 

 

 

 

 

 

A2

 

3

42

 

 

A7

 

 

 

 

A1

 

4

41

 

 

OE

 

 

 

 

 

 

A0

 

5

40

 

 

BHE

 

 

 

 

 

 

 

 

 

6

39

 

BLE

 

 

CE

 

 

 

 

 

IO0

 

7

38

 

 

IO15

 

 

 

 

 

IO1

 

8

37

 

IO14

 

 

 

 

 

IO2

 

9

36

 

 

IO13

 

 

 

 

 

IO3

 

10

35

 

 

IO12

 

 

 

 

VCC

 

11

34

 

VSS

 

 

 

 

VSS

 

12

33

 

 

V

 

IO4

 

13

32

 

 

CC

 

 

 

IO

 

 

 

IO5

 

14

31

 

 

IO1110

 

 

 

 

 

IO6

 

15

30

 

 

IO9

 

IO7

 

16

29

 

IO

 

 

 

 

 

 

 

 

17

28

 

8

 

 

WE

 

 

 

 

NC

 

 

 

 

 

A16

 

18

27

 

A

 

 

 

A15

 

19

26

 

 

A89

 

 

 

 

 

A14

 

20

25

 

 

A

 

A13

 

21

24

 

A10

 

 

 

A12

 

22

23

 

11

 

 

 

 

NC

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

1.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.

2.NC pins are not connected on the die.

3.Pins D3, H1, G2, and H6 in the VFBGA package are address expansion pins for 4 Mb, 8 Mb, 16 Mb, and 32 Mb, respectively.

Document Number: 001-07141 Rev. *F

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtMin Pin ConfigurationProduct Portfolio Max TypCapacitance Electrical CharacteristicsMaximum Ratings Device Range AmbientAC Test Loads and Waveforms Data Retention CharacteristicsThermal Resistance Data Retention WaveformSwitching Characteristics Data OUT Previous Data Valid Switching WaveformsAddress Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW BHE BLE Inputs or Outputs Mode PowerTruth Table Package Diagram CY62137FV30LL-45BVI 51-85150 Ball VfbgaPin Tsop REV ECN no Issue Orig. Date Change Description of ChangeDocument History

CY62137FV30 specifications

The Cypress CY62137FV30 is a high-performance SRAM (Static Random Access Memory) device designed for high-speed applications. It features a 4-Mbit memory capacity organized into a 512K x 8-bit configuration, making it suitable for a wide range of embedded systems, computing, and communication applications.

One of the standout features of the CY62137FV30 is its fast access time, with speeds as low as 30 ns. This rapid response capability is essential for applications requiring fast data retrieval, such as telecommunications equipment, automotive systems, and consumer electronics where performance is critical. The device also supports a wide operating voltage range from 2.7V to 3.6V, providing flexibility for use in various power-sensitive applications.

In terms of packaging, the CY62137FV30 is available in compact form factors, allowing for designs with space constraints. It comes in standard packages such as TSOPII and SOJ, which are well-regarded in the industry for ease of integration into circuit boards.

The CY62137FV30 employs advanced CMOS technology, ensuring low power consumption while maintaining high-speed performance. This is particularly beneficial in battery-operated devices where power efficiency is a priority. The device offers both read and write cycles, allowing for seamless data operations. Additionally, the SRAM architecture supports asynchronous operations, allowing users to access memory without the need for a clock signal.

The memory is designed with built-in write protection features, enhancing data integrity during critical operations. It is compatible with various standard memory interfaces, making it easy to integrate into different system architectures. Moreover, the device can endure a significant number of read and write cycles, ensuring durability and reliability over extended use.

The CY62137FV30 also features a simple interface, with easy-to-use control signals, which facilitate straightforward integration and design flexibility. Its ability to handle dynamic data and provide quick access to stored information makes it an excellent choice for applications like networking equipment, industrial automation, and high-performance computing systems.

In summary, the Cypress CY62137FV30 is a versatile SRAM solution that combines high speed, low power consumption, and compact packaging. Its innovative technology and reliable performance make it an excellent choice for various applications requiring efficient and fast memory solutions.