Cypress CY62137FV30 manual Write Cycle 3 WE Controlled, OE LOW

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CY62137FV30 MoBL®

Switching Waveforms (continued)

Figure 9. Write Cycle 3: WE Controlled, OE LOW [21]

 

 

tWC

ADDRESS

 

 

 

 

tSCE

CE

 

 

BHE/BLE

 

tBW

 

tAW

tHA

WE

tSA

tPWE

 

 

 

 

tHD

 

 

tSD

DATA IO

NOTE 22

DATAIN

 

tHZWE

tLZWE

Figure 10. Write Cycle 4: BHE/BLE Controlled, OE LOW [21]

 

 

tWC

ADDRESS

 

 

CE

 

 

 

 

tSCE

 

tAW

tHA

BHE/BLE

 

tBW

 

 

 

tSA

 

WE

 

tPWE

 

tHZWE

tHD

 

 

tSD

DATA IO

NOTE 22

DATAIN

 

 

tLZWE

Document Number: 001-07141 Rev. *F

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configuration Product PortfolioMin Max TypElectrical Characteristics Maximum RatingsCapacitance Device Range AmbientData Retention Characteristics Thermal ResistanceAC Test Loads and Waveforms Data Retention WaveformSwitching Characteristics Data OUT Previous Data Valid Switching WaveformsAddress Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW BHE BLE Inputs or Outputs Mode PowerTruth Table Package Diagram CY62137FV30LL-45BVI 51-85150 Ball VfbgaPin Tsop REV ECN no Issue Orig. Date Change Description of ChangeDocument History

CY62137FV30 specifications

The Cypress CY62137FV30 is a high-performance SRAM (Static Random Access Memory) device designed for high-speed applications. It features a 4-Mbit memory capacity organized into a 512K x 8-bit configuration, making it suitable for a wide range of embedded systems, computing, and communication applications.

One of the standout features of the CY62137FV30 is its fast access time, with speeds as low as 30 ns. This rapid response capability is essential for applications requiring fast data retrieval, such as telecommunications equipment, automotive systems, and consumer electronics where performance is critical. The device also supports a wide operating voltage range from 2.7V to 3.6V, providing flexibility for use in various power-sensitive applications.

In terms of packaging, the CY62137FV30 is available in compact form factors, allowing for designs with space constraints. It comes in standard packages such as TSOPII and SOJ, which are well-regarded in the industry for ease of integration into circuit boards.

The CY62137FV30 employs advanced CMOS technology, ensuring low power consumption while maintaining high-speed performance. This is particularly beneficial in battery-operated devices where power efficiency is a priority. The device offers both read and write cycles, allowing for seamless data operations. Additionally, the SRAM architecture supports asynchronous operations, allowing users to access memory without the need for a clock signal.

The memory is designed with built-in write protection features, enhancing data integrity during critical operations. It is compatible with various standard memory interfaces, making it easy to integrate into different system architectures. Moreover, the device can endure a significant number of read and write cycles, ensuring durability and reliability over extended use.

The CY62137FV30 also features a simple interface, with easy-to-use control signals, which facilitate straightforward integration and design flexibility. Its ability to handle dynamic data and provide quick access to stored information makes it an excellent choice for applications like networking equipment, industrial automation, and high-performance computing systems.

In summary, the Cypress CY62137FV30 is a versatile SRAM solution that combines high speed, low power consumption, and compact packaging. Its innovative technology and reliable performance make it an excellent choice for various applications requiring efficient and fast memory solutions.