Cypress CY62128E Maximum Ratings, Electrical Characteristics Over the Operating Range, Gnd Vi Vcc

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MoBL® CY62128E

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Output Current into Outputs (LOW)

............................. 20 mA

Static Discharge Voltage

> 2001V

(MIL-STD-883, Method 3015)

 

Latch up Current

> 200 mA

Ambient Temperature with

 

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground

 

 

 

Potential

–0.5V to 6.0V (VCC(max) + 0.5V)

DC Voltage Applied to Outputs

 

 

in High-Z State[5, 6]

–0.5V to 6.0V (V

CC(max)

+ 0.5V)

DC Input Voltage[5, 6]

 

 

–0.5V to 6.0V (V

CC(max)

+ 0.5V)

 

 

 

Electrical Characteristics (Over the Operating Range)

Operating Range

Device

Range

Ambient

[7]

Temperature

VCC

CY62128ELL

Ind’l/Auto-A

–40°C to +85°C

4.5V to 5.5V

 

 

 

 

 

Auto-E

–40°C to +125°C

 

 

 

 

 

Parameter

Description

 

 

Test Conditions

45 ns (Ind’l/Auto-A)

 

55 ns (Auto-E)

Unit

 

 

Min

Typ[3]

Max

Min

 

Typ[3]

Max

 

 

 

 

 

 

 

 

 

VOH

Output HIGH

 

IOH = –1 mA

 

2.4

 

 

2.4

 

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 2.1 mA

 

 

 

0.4

 

 

 

0.4

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

VCC = 4.5V to 5.5V

2.2

 

VCC + 0.5

2.2

 

 

VCC + 0.5

V

VIL

Input LOW voltage

 

VCC = 4.5V to 5.5V

–0.5

 

0.8

–0.5

 

 

0.8

V

IIX

Input Leakage

 

GND < VI < VCC

 

–1

 

+1

–4

 

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

–4

 

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fmax = 1/tRC

 

VCC = VCC(max)

 

11

16

 

 

11

35

mA

 

Supply Current

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

1.3

2

 

 

1.3

4

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

 

ISB2 [8]

Automatic CE

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

1

4

 

 

1

30

μA

CE

 

 

 

Power down

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

 

Current—CMOS

 

f = 0, VCC = VCC(max)

 

 

 

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance (For all Packages) [9]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Notes

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full device AC operation assumes a 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

8.Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

9.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05485 Rev. *F

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionInd’l/Auto-A Pin Configuration2Product Portfolio Pin Soic Top ViewGND VI VCC Electrical Characteristics Over the Operating RangeMaximum Ratings Device Range AmbientData Retention Waveform11 Data Retention Characteristics Over the Operating RangeThermal Resistance9 AC Test Loads and WaveformWrite Cycle15 Switching Characteristics Over the Operating Range12Parameter Description Ns Ind’l/Auto-A Ns Auto-E Unit Min Read CycleSwitching Waveforms Write Cycle No CE1 or CE2 Controlled 11, 15, 19 Inputs/Outputs Mode PowerCY62128ELL-55ZAXE Package DiagramsOrdering Information CY62128ELL-45ZAXIPin Shrunk Thin Small Outline Package 8 x 13.4 mm Pin Thin Small Outline Package Type I 8 x 20 mm Submission Orig. Description of Change Date Document HistoryUSB Sales, Solutions, and Legal Information