MoBL® CY62128E
Thermal Resistance[9]
Parameter | Description | Test Conditions | SOIC | STSOP | TSOP | Unit | |
Package | Package | Package | |||||
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ΘJA | Thermal Resistance | Still Air, soldered on a 3 × 4.5 inch, | 48.67 | 32.56 | 33.01 | °C/W | |
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ΘJC | Thermal Resistance |
| 25.86 | 3.59 | 3.42 | °C/W | |
| (Junction to Case) |
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AC Test Loads and Waveform
R1
VCC
ALL INPUT PULSES
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
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| 3.0V |
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| 90% | |||
R2 | 10% |
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| GND |
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| Rise Time = 1 V/ns |
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Equivalent to: | THEVENIN EQUIVALENT | |||||||||||||
OUTPUT |
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| RTH |
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| V | |||||
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90%
10%
Fall Time = 1 V/ns
Parameters | Value | Unit |
R1 | 1800 | Ω |
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R2 | 990 | Ω |
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RTH | 639 | Ω |
VTH | 1.77 | V |
Data Retention Characteristics (Over the Operating Range)
Parameter | Description |
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| Min | Typ[3] | Max | Unit | |
VDR | VCC for Data Retention |
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| 2 |
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| V |
ICCDR [8] | Data Retention Current | VCC= VDR, |
| 1 | > VCC − 0.2V or CE2 < 0.2V, |
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| 4 | μA | |
CE |
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| VIN > VCC - 0.2V or VIN < 0.2V |
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| 30 | μ | |||||
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| A | ||
tCDR [9] | Chip Deselect to Data |
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| 0 |
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| Retention Time |
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t [10] | Operation Recovery |
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| t | RC |
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R | Time |
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Data Retention Waveform[11]
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| VCC(min) | DATA RETENTION MODE | VCC(min) | |
V | CC | V | > 2.0V | ||
| tCDR | DR |
| tR | |
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CE |
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Notes
10.Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.
11.CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.
Document #: | Page 4 of 12 |
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