Cypress STK14C88-5 manual Switching

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STK14C88-5

SRAM Write Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Description

 

 

 

35 ns

 

 

45 ns

Unit

Cypress

 

Alt

 

 

Min

 

Max

 

Min

 

Max

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

 

tAVAV

 

Write Cycle Time

 

35

 

 

 

45

 

 

ns

tPWE

 

 

tWLWH, tWLEH

 

Write Pulse Width

 

25

 

 

 

30

 

 

ns

tSCE

 

 

tELWH, tELEH

 

Chip Enable To End of Write

 

25

 

 

 

30

 

 

ns

tSD

 

 

tDVWH, tDVEH

 

Data Setup to End of Write

 

12

 

 

 

15

 

 

ns

tHD

 

 

tWHDX, tEHDX

 

Data Hold After End of Write

 

0

 

 

 

0

 

 

ns

tAW

 

 

tAVWH, tAVEH

 

Address Setup to End of Write

 

25

 

 

 

30

 

 

ns

tSA

 

 

tAVWL, tAVEL

 

Address Setup to Start of Write

 

0

 

 

 

0

 

 

ns

tHA

 

 

tWHAX, tEHAX

 

Address Hold After End of Write

 

0

 

 

 

0

 

 

ns

t

[11,12]

 

tWLQZ

 

Write Enable to Output Disable

 

 

 

 

13

 

 

 

15

ns

HZWE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

[11]

 

tWHQX

 

Output Active After End of Write

 

5

 

 

 

5

 

 

ns

LZWE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching

Waveforms

 

Figure 10. SRAM Write Cycle 1:

 

Controlled [13, 14]

 

 

 

 

 

 

 

 

 

WE

 

 

 

 

 

tWC

ADDRESS

 

 

tSCE

CE

 

 

tAW

 

tSA

WE

tPWE

 

 

tSD

DATA IN

DATA VALID

 

tHZWE

 

HIGH IMPEDANCE

DATA OUT

PREVIOUS DATA

tHA

tHD

tLZWE

ADDRESS

CE

WE

DATA IN

DATA OUT

Figure 11. SRAM Write Cycle 2: CE Controlled [13, 14]

tWC

tSA

 

 

 

tSCE

 

 

 

tHA

 

 

 

 

 

 

 

 

 

 

 

 

 

tAW

tPWE

tSD tHD

DATA VALID

HIGH IMPEDANCE

Notes

12.If WE is Low when CE goes Low, the outputs remain in the high impedance state.

13.HSB must be high during SRAM WRITE cycles.

14.CE or WE must be greater than VIH during address transitions.

Document Number: 001-51038 Rev. **

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesFunctional Description San Jose, CA Document Number 001-51038 Rev Revised March 02Pin Configurations Pin DefinitionsSram Read AutoStore Inhibit modeDevice Operation Sram WriteSoftware Store Hardware Recall Power UpHardware Store HSB Operation Software RecallNoise Considerations Low Average Active PowerData Protection Hardware ProtectA13-A0 Mode Power Hardware Mode SelectionBest Practices Operating Range DC Electrical CharacteristicsMaximum Ratings Data Retention and EnduranceThermal Resistance CapacitanceAC Test Conditions Switching Waveforms AC Switching CharacteristicsParameter Description 35 ns 45 ns Unit Cypress Alt Min Max Switching AutoStore or Power Up Recall Parameter Alt Description STK14C88-5 Unit Min MaxSoftware Controlled STORE/RECALL Cycle Parameter Alt Description 35 ns 45 ns Unit Min MaxHardware Store Pulse Width Hardware Store CycleHardware Store High to Inhibit Off 700 Hardware Store Low to Store Busy 300Part Numbering Nomenclature STK14C88 5 C 35 M Ordering InformationPackage Diagram Pin 300-Mil Side Braze DILPad 450-Mil LCC New data sheet Sales, Solutions, and Legal InformationDocument History

STK14C88-5 specifications

The Cypress STK14C88-5 is a high-performance, non-volatile static random-access memory (SRAM) solution that caters to a wide range of applications. This device seamlessly combines the benefits of SRAM technology with non-volatile memory, making it a compelling option for embedded systems requiring fast access speeds alongside persistent data storage.

One of the key features of the STK14C88-5 is its memory density. This chip comes with an 88 Kbit storage capacity, which is ample for various applications, including configuration storage and data logging in industrial systems, telecommunications, and consumer electronics. The memory is organized in a way that supports both byte-wise and word-wise access, ensuring flexibility to accommodate different data structures.

Speed is another attractive characteristic of the STK14C88-5. It operates at access speeds of up to 55 nanoseconds, providing quick read and write capabilities. This rapid performance is crucial for time-sensitive applications, enabling the device to handle real-time data processing effectively. The SRAM also supports a wide operating voltage range from 2.7V to 5.5V, making it versatile for different power supply configurations.

The device utilizes advanced technology to enhance reliability and endurance. The STK14C88-5 features built-in EEPROM technology, which allows it to retain data even when power is lost. This non-volatility is ideal for critical applications where data integrity is paramount.

In terms of interface, the STK14C88-5 provides a simple parallel interface, ensuring compatibility with various microcontrollers and processors. It also has control signals that support straightforward data read and write operations, allowing designers to integrate it easily into their existing architectures.

Moreover, the Cypress STK14C88-5 incorporates low-power consumption features, making it suitable for battery-operated devices. Its efficient power management ensures minimal energy usage without compromising performance, which is crucial in today’s energy-conscious environment.

Overall, the Cypress STK14C88-5 stands out with its combination of non-volatile storage, high-speed access, flexibility of operation, and power efficiency. These features make it an ideal choice for applications that demand reliable memory solutions with fast data processing capabilities, solidifying its position as a valuable component in the semiconductor industry.
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