Cypress STK14C88-5 manual AC Switching Characteristics, Switching Waveforms

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STK14C88-5

AC Switching Characteristics

 

 

 

 

 

 

 

SRAM Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Description

35 ns

 

45 ns

Unit

 

 

Cypress

Alt

 

Min

 

Max

Min

 

Max

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tACE

 

tELQV

 

Chip Enable Access Time

 

 

35

 

 

45

ns

t

RC

[9]

 

tAVAV, tELEH

 

Read Cycle Time

35

 

 

45

 

 

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

t

AA

[10]

tAVQV

 

Address Access Time

 

 

35

 

 

45

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

tDOE

 

tGLQV

 

Output Enable to Data Valid

 

 

15

 

 

20

ns

t

 

[10]

tAXQX

 

Output Hold After Address Change

5

 

 

5

 

 

ns

 

OHA

 

 

 

 

 

 

 

 

 

 

 

t

LZCE

[11]

tELQX

 

Chip Enable to Output Active

5

 

 

5

 

 

ns

 

 

 

 

 

 

 

 

 

 

 

 

t

HZCE

[11]

tEHQZ

 

Chip Disable to Output Inactive

 

 

13

 

 

15

ns

 

 

 

 

 

 

 

 

 

 

 

 

t

LZOE

[11]

tGLQX

 

Output Enable to Output Active

0

 

 

0

 

 

ns

 

 

 

 

 

 

 

 

 

 

 

 

t

HZOE

[11]

tGHQZ

 

Output Disable to Output Inactive

 

 

13

 

 

15

ns

 

 

 

 

 

 

 

 

 

 

 

 

t

PU

[8]

 

tELICCH

 

Chip Enable to Power Active

0

 

 

0

 

 

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

t

PD

[8]

 

tEHICCL

 

Chip Disable to Power Standby

 

 

35

 

 

45

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching Waveforms

Figure 8. SRAM Read Cycle 1: Address Controlled [9, 10]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

$''5(66

W5&

W$$

W2+$

'4 '$7$287

'$7$9$/,'

Figure 9. SRAM Read Cycle 2: CE and OE Controlled [9]

$''5(66

&(

2(

'4 '$7$287

,&&

W5&

W$&(

W/=&(

W'2(

W/=2(

W38 $&7,9(

67$1'%<

W3'

W+=&(

W+=2(

'$7$9$/,'

Notes

9.WE and HSB must be HIGH during SRAM Read cycles.

10.Device is continuously selected with CE and OE both Low.

11.Measured ±200 mV from steady state output voltage.

Document Number: 001-51038 Rev. **

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Contents Functional Description FeaturesCypress Semiconductor Corporation 198 Champion Court San Jose, CA Document Number 001-51038 Rev Revised March 02Pin Definitions Pin ConfigurationsDevice Operation AutoStore Inhibit modeSram Read Sram WriteHardware Store HSB Operation Hardware Recall Power UpSoftware Store Software RecallData Protection Low Average Active PowerNoise Considerations Hardware ProtectHardware Mode Selection A13-A0 Mode PowerBest Practices Maximum Ratings DC Electrical CharacteristicsOperating Range Data Retention and EnduranceCapacitance Thermal ResistanceAC Test Conditions AC Switching Characteristics Switching WaveformsParameter Description 35 ns 45 ns Unit Cypress Alt Min Max Switching Parameter Alt Description STK14C88-5 Unit Min Max AutoStore or Power Up RecallParameter Alt Description 35 ns 45 ns Unit Min Max Software Controlled STORE/RECALL CycleHardware Store High to Inhibit Off 700 Hardware Store CycleHardware Store Pulse Width Hardware Store Low to Store Busy 300Ordering Information Part Numbering Nomenclature STK14C88 5 C 35 MPin 300-Mil Side Braze DIL Package DiagramPad 450-Mil LCC Sales, Solutions, and Legal Information New data sheetDocument History

STK14C88-5 specifications

The Cypress STK14C88-5 is a high-performance, non-volatile static random-access memory (SRAM) solution that caters to a wide range of applications. This device seamlessly combines the benefits of SRAM technology with non-volatile memory, making it a compelling option for embedded systems requiring fast access speeds alongside persistent data storage.

One of the key features of the STK14C88-5 is its memory density. This chip comes with an 88 Kbit storage capacity, which is ample for various applications, including configuration storage and data logging in industrial systems, telecommunications, and consumer electronics. The memory is organized in a way that supports both byte-wise and word-wise access, ensuring flexibility to accommodate different data structures.

Speed is another attractive characteristic of the STK14C88-5. It operates at access speeds of up to 55 nanoseconds, providing quick read and write capabilities. This rapid performance is crucial for time-sensitive applications, enabling the device to handle real-time data processing effectively. The SRAM also supports a wide operating voltage range from 2.7V to 5.5V, making it versatile for different power supply configurations.

The device utilizes advanced technology to enhance reliability and endurance. The STK14C88-5 features built-in EEPROM technology, which allows it to retain data even when power is lost. This non-volatility is ideal for critical applications where data integrity is paramount.

In terms of interface, the STK14C88-5 provides a simple parallel interface, ensuring compatibility with various microcontrollers and processors. It also has control signals that support straightforward data read and write operations, allowing designers to integrate it easily into their existing architectures.

Moreover, the Cypress STK14C88-5 incorporates low-power consumption features, making it suitable for battery-operated devices. Its efficient power management ensures minimal energy usage without compromising performance, which is crucial in today’s energy-conscious environment.

Overall, the Cypress STK14C88-5 stands out with its combination of non-volatile storage, high-speed access, flexibility of operation, and power efficiency. These features make it an ideal choice for applications that demand reliable memory solutions with fast data processing capabilities, solidifying its position as a valuable component in the semiconductor industry.