Cypress STK14C88-5 manual Pin Configurations, Pin Definitions

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STK14C88-5

Pin Configurations

Figure 1. Pin Diagram: 32-Pin DIP

Figure 2. Pin Diagram: 32-Pin LCC

Pin Definitions

Pin Name

Alt

IO Type

 

 

Description

A0–A14

 

 

 

 

 

 

 

Input

Address Inputs. Used to select one of the 32,768 bytes of the nvSRAM.

DQ0-DQ7

 

 

 

 

 

 

 

Input or Output

Bidirectional Data IO Lines. Used as input or output lines depending on operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input

Write Enable Input, Active LOW. When the chip is enabled and

WE

is LOW, data on the IO

 

 

WE

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pins is written to the specific address location.

 

 

 

 

 

 

 

 

 

 

 

 

 

Input

Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.

 

 

 

CE

 

E

 

 

 

 

 

 

 

 

 

 

 

 

 

Input

Output Enable, Active LOW. The active LOW

OE

input enables the data output buffers during

 

 

OE

 

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

read cycles. Deasserting OE HIGH causes the IO pins to tri-state.

 

VSS

 

 

 

 

 

 

 

Ground

Ground for the Device. The device is connected to ground of the system.

 

VCC

 

 

 

 

 

 

 

Power Supply

Power Supply Inputs to the Device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input or Output

Hardware Store Busy

(HSB)

. When LOW, this output indicates a Hardware Store is in progress.

 

HSB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

When pulled low external to the chip, it initiates a nonvolatile STORE operation. A weak internal

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pull up resistor keeps this pin high if not connected (connection optional).

VCAP

 

 

 

 

 

 

 

Power Supply

AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

to nonvolatile elements.

Document Number: 001-51038 Rev. **

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesFunctional Description San Jose, CA Document Number 001-51038 Rev Revised March 02Pin Configurations Pin DefinitionsSram Read AutoStore Inhibit modeDevice Operation Sram WriteSoftware Store Hardware Recall Power UpHardware Store HSB Operation Software RecallNoise Considerations Low Average Active PowerData Protection Hardware ProtectBest Practices Hardware Mode SelectionA13-A0 Mode Power Operating Range DC Electrical CharacteristicsMaximum Ratings Data Retention and EnduranceAC Test Conditions CapacitanceThermal Resistance Parameter Description 35 ns 45 ns Unit Cypress Alt Min Max AC Switching CharacteristicsSwitching Waveforms Switching AutoStore or Power Up Recall Parameter Alt Description STK14C88-5 Unit Min MaxSoftware Controlled STORE/RECALL Cycle Parameter Alt Description 35 ns 45 ns Unit Min MaxHardware Store Pulse Width Hardware Store CycleHardware Store High to Inhibit Off 700 Hardware Store Low to Store Busy 300Part Numbering Nomenclature STK14C88 5 C 35 M Ordering InformationPackage Diagram Pin 300-Mil Side Braze DILPad 450-Mil LCC Document History Sales, Solutions, and Legal InformationNew data sheet

STK14C88-5 specifications

The Cypress STK14C88-5 is a high-performance, non-volatile static random-access memory (SRAM) solution that caters to a wide range of applications. This device seamlessly combines the benefits of SRAM technology with non-volatile memory, making it a compelling option for embedded systems requiring fast access speeds alongside persistent data storage.

One of the key features of the STK14C88-5 is its memory density. This chip comes with an 88 Kbit storage capacity, which is ample for various applications, including configuration storage and data logging in industrial systems, telecommunications, and consumer electronics. The memory is organized in a way that supports both byte-wise and word-wise access, ensuring flexibility to accommodate different data structures.

Speed is another attractive characteristic of the STK14C88-5. It operates at access speeds of up to 55 nanoseconds, providing quick read and write capabilities. This rapid performance is crucial for time-sensitive applications, enabling the device to handle real-time data processing effectively. The SRAM also supports a wide operating voltage range from 2.7V to 5.5V, making it versatile for different power supply configurations.

The device utilizes advanced technology to enhance reliability and endurance. The STK14C88-5 features built-in EEPROM technology, which allows it to retain data even when power is lost. This non-volatility is ideal for critical applications where data integrity is paramount.

In terms of interface, the STK14C88-5 provides a simple parallel interface, ensuring compatibility with various microcontrollers and processors. It also has control signals that support straightforward data read and write operations, allowing designers to integrate it easily into their existing architectures.

Moreover, the Cypress STK14C88-5 incorporates low-power consumption features, making it suitable for battery-operated devices. Its efficient power management ensures minimal energy usage without compromising performance, which is crucial in today’s energy-conscious environment.

Overall, the Cypress STK14C88-5 stands out with its combination of non-volatile storage, high-speed access, flexibility of operation, and power efficiency. These features make it an ideal choice for applications that demand reliable memory solutions with fast data processing capabilities, solidifying its position as a valuable component in the semiconductor industry.
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