Cypress CY62138EV30 manual Features, Functional Description1, Logic Block Diagram, A a a a

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CY62138EV30

MoBL®

2-Mbit (256K x 8) MoBLStatic RAM

Features

Very high speed: 45 ns

Wide voltage range: 2.20V – 3.60V

Pin-compatible with CY62138CV30

Ultra-low standby power

Typical standby current: 1 A

Maximum standby current: 7 A

Ultra-low active power

Typical active current: 2 mA @ f = 1 MHz

Easy memory expansion with CE and OE features

Automatic power-down when deselected

CMOS for optimum speed/power

Offered in Pb-free 36-ball BGA package

Functional Description[1]

The CY62138EV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH).

Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW).

Logic Block Diagram

 

 

 

 

 

 

 

Data in Drivers

 

I/O0

 

 

 

A

 

 

 

 

 

I/O

A10

DECODER

 

 

 

 

1

A

 

 

 

 

I/O2

A23

 

 

 

AMPS

A

 

 

 

 

A45

 

 

 

I/O3

A

 

256K x 8

 

A6

ROW

SENSE

 

A7

ARRAY

 

A89

 

 

 

I/O4

A10

 

 

 

 

 

 

A11

 

 

 

 

 

I/O5

 

 

 

 

 

 

CE

 

COLUMN

POWER

I/O6

 

DOWN

 

 

DECODER

 

 

 

 

I/O7

WE

 

 

 

 

 

OE

12

13

14

15 16 17

 

 

A A A A A A

 

 

 

 

 

Note:

 

 

 

 

 

 

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05577 Rev. *A

 

Revised February 14, 2006

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Pin Configuration2= 1 MHz = f max Min Typ Max Typ MaxMaximum Ratings Electrical Characteristics Over the Operating RangeThermal Resistance Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention WaveformSwitching Waveforms Switching Characteristics Over the Operating Range945 ns Parameter Description Unit Min Max Read Cycle Write CycleWrite Cycle No WE Controlled16 Read Cycle No OE Controlled14Truth Table Inputs/Outputs Mode PowerWrite Cycle No CE Controlled16 Write Cycle No WE Controlled, OE LOW18Ordering Information Package DiagramsBall Vfbga 6 x 8 x 1 mm Document History Issue Orig. Description of Change Date