CY62138EV30
MoBL®
Switching Characteristics (Over the Operating Range)[9]
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| 45 ns |
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Parameter |
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| Description |
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| Unit |
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| Min. |
| Max. | |||
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Read Cycle |
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tRC |
| Read Cycle Time | 45 |
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| ns | ||||
tAA |
| Address to Data Valid |
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| 45 | ns | ||||
tOHA |
| Data Hold from Address Change | 10 |
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| ns | ||||
tACE |
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| LOW to Data Valid |
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| 45 | ns |
CE |
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tDOE |
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| LOW to Data Valid |
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| 22 | ns |
OE |
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tLZOE |
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| LOW to Low Z[10] | 5 |
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| ns |
OE |
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tHZOE |
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| HIGH to High Z[10,11] |
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| 18 | ns |
OE |
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tLZCE |
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| LOW to Low Z[10] | 10 |
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| ns | |
CE |
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t |
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| HIGH to High Z[10, 11] |
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| 18 | ns | |
CE |
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HZCE |
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tPU |
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| LOW to | 0 |
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| ns | ||
CE |
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tPD |
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| HIGH to |
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| 45 | ns | |
CE |
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Write Cycle[12] |
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tWC |
| Write Cycle Time | 45 |
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| ns | ||||
tSCE |
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| LOW to Write End | 35 |
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| ns | |
CE |
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tAW |
| Address | 35 |
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| ns | ||||
tHA |
| Address Hold from Write End | 0 |
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| ns | ||||
tSA |
| Address | 0 |
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| ns | ||||
tPWE |
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| Pulse Width | 35 |
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| ns |
WE |
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tSD |
| Data | 25 |
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| ns | ||||
tHD |
| Data Hold from Write End | 0 |
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| ns | ||||
t |
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| LOW to High Z[10, 11] |
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| 18 | ns |
WE |
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HZWE |
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t |
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| HIGH to Low Z[10] | 10 |
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WE |
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LZWE |
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Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[13, 14]
ADDRESS
tOHA
tRC
tAA
DATA OUT | PREVIOUS DATA VALID |
Notes:
DATA VALID
9. Test Conditions for all parameters other than
10. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
11. tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a
12.The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input
13.Device is continuously selected. OE, CE = VIL.
14.WE is HIGH for read cycle.
Document #: | Page 5 of 9 |
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