Cypress CY7C1302DV25 manual Selection Guide, Pin Configuration Ball Fbga 13 x 15 x 1.4 mm Pinout

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CY7C1302DV25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Selection Guide

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1302DV25-167

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Operating Frequency

 

 

 

 

 

 

 

 

 

 

 

 

 

167

 

 

 

 

 

MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Operating Current

 

 

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Configuration

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

165-ball FBGA (13 x 15 x 1.4 mm) Pinout

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1302DV25 (512K x 18)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

2

 

 

 

3

4

 

 

5

 

6

 

 

 

7

 

8

 

9

10

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

NC

Gnd/144M

 

NC/36M

 

WPS

 

 

BWS

1

 

 

K

 

 

 

NC

 

RPS

 

NC/18M

Gnd/72M

NC

 

B

 

NC

Q9

 

D9

 

A

 

NC

 

 

K

 

BWS

0

 

A

NC

NC

Q8

 

C

 

NC

NC

 

D10

 

VSS

 

A

 

 

A

 

A

 

VSS

NC

Q7

D8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

NC

D11

 

Q10

 

VSS

 

VSS

VSS

 

VSS

 

VSS

NC

NC

D7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

E

 

NC

NC

 

Q11

VDDQ

 

VSS

VSS

 

VSS

VDDQ

NC

D6

Q6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F

 

NC

Q12

 

D12

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

NC

Q5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G

 

NC

D13

 

Q13

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

NC

D5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H

 

NC

VREF

 

VDDQ

VDDQ

 

VDD

VSS

 

VDD

VDDQ

VDDQ

VREF

ZQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J

 

NC

NC

 

D14

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

Q4

D4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K

 

NC

NC

 

Q14

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

D3

Q3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

NC

Q15

 

D15

VDDQ

 

VSS

VSS

 

VSS

VDDQ

NC

NC

Q2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M

 

NC

NC

 

D16

 

VSS

 

VSS

VSS

 

VSS

 

VSS

NC

Q1

D2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

N

 

NC

D17

 

Q16

 

VSS

 

A

 

A

 

A

 

VSS

NC

NC

D1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

NC

NC

 

Q17

 

A

 

A

C

 

A

 

A

NC

D0

Q0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

TDO

TCK

 

A

 

A

 

A

 

C

 

 

A

 

A

A

TMS

TDI

 

Pin Definitions

 

 

Name

I/O

 

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

D[17:0]

Input-

Data input signals, sampled on the rising edge of K and

K

clocks during valid Write opera-

 

 

 

 

 

Synchronous

tions.

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Write Port Select, active LOW. Sampled on the rising edge of the K clock. When asserted active,

 

 

WPS

 

 

 

 

 

Synchronous

a Write operation is initiated. Deasserting will deselect the Write port. Deselecting the Write port

 

 

 

 

 

 

will cause D[17:0] to be ignored.

 

 

 

 

 

 

 

 

 

 

 

0,

Input-

Byte Write Select 0, 1, active LOW. Sampled on the rising edge of the K and

 

clocks during

 

 

BWS

K

 

 

BWS1

Synchronous

Write operations. Used to select which byte is written into the device during the current portion of

 

 

 

 

 

 

the Write operations. Bytes not written remain unaltered.

 

 

 

 

 

 

BWS0 controls D[8:0] and BWS1

controls D[17:9].

 

 

 

 

 

 

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write

 

 

 

 

 

 

Select will cause the corresponding byte of data to be ignored and not written into the device.

 

 

A

Input-

Address Inputs. Sampled on the rising edge of the K (read address) and

 

(write address) clocks

 

 

K

 

 

 

 

 

Synchronous

for active Read and Write operations. These address inputs are multiplexed for both Read and

 

 

 

 

 

 

Write operations. Internally, the device is organized as 512K x 18 (2 arrays each of 256K x 18).

 

 

 

 

 

 

These inputs are ignored when the appropriate port is deselected.

 

 

Q[17:0]

Outputs-

Data Output signals. These pins drive out the requested data during a Read operation. Valid data

 

 

 

 

 

Synchronous

is driven out on the rising edge of both the C and C clocks during Read operations or K and K

 

 

 

 

 

 

when in single clock mode. When the Read port is deselected, Q[17:0] are automatically

 

 

 

 

 

 

three-stated.

 

 

 

 

 

 

 

 

 

 

 

Input-

Read Port Select, active LOW. Sampled on the rising edge of positive input clock (K). When

 

 

RPS

 

 

 

 

 

Synchronous

active, a Read operation is initiated. Deasserting will cause the Read port to be deselected. When

 

 

 

 

 

 

deselected, the pending access is allowed to complete and the output drivers are automatically

 

 

 

 

 

 

three-stated following the next rising edge of the C clock. Each read access consists of a burst of

 

 

 

 

 

 

two sequential transfers.

 

 

 

 

 

 

 

Document #: 38-05625 Rev. *A

 

 

 

 

 

 

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Contents Logic Block Diagram CY7C1302DV25 FeaturesConfigurations Functional DescriptionPin Definitions Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutSelection Guide Introduction Application Example1 Comments Write Cycle Descriptions 2,8Operation Ieee 1149.1 Serial Boundary Scan Jtag Sample Z TAP Controller State Diagram9 EXIT2-IR UPDATE-DR UPDATE-IRParameter Description Min Max Unit TAP Controller Block DiagramParameter Description Test Conditions Min Max Unit Set-up TimesTAP Timing and Test Conditions12 Identification Register DefinitionsRegister Name Bit Size Scan Register SizesInstruction Codes Instruction Code DescriptionBoundary Scan Order Bit # Bump IDOperating Range Range Ambient Temperature TMaximum Ratings Parameter Description Test Conditions Min Typ Max UnitCapacitance20 Switching Characteristics Over the Operating RangeThermal Resistance20 AC Test Loads and WaveformsClock Rise Active to Active Switching Characteristics Over the Operating RangeClock Rise or K/K in single clock mode to Data Valid Rise to High-Z Active to High-Z 23Switching Waveforms25, 26 Write Read NOPCY7C1302DV25-167BZXC Package DiagramOrdering Information CY7C1302DV25-167BZXIIssue Date Orig. Description of Change Document History

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.
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