Cypress CY7C1302DV25 manual TAP Timing and Test Conditions12, Identification Register Definitions

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CY7C1302DV25

TAP AC Switching Characteristics Over the Operating Range (continued) [11, 12]

Parameter

Description

Min.

Max.

Unit

Output Times

 

 

 

 

tTDOV

TCK Clock LOW to TDO Valid

 

20

ns

tTDOX

TCK Clock LOW to TDO Invalid

0

 

ns

TAP Timing and Test Conditions[12]

 

 

 

 

 

1.25V

TDO

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Z0

= 50

 

 

 

 

 

 

CL = 20 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a) GND

Test Clock

TCK

Test Mode Select

TMS

Test Data-In

TDI

tTMSS

tTDIS

0V

tTH

ALL INPUT PULSES

2.5V

1.25V

tTL

tTCYC

tTMSH

tTDIH

Test Data-Out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Identification Register Definitions

 

 

tTDOX

tTDOV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

Instruction Field

 

 

 

 

 

 

 

 

 

Description

 

CY7C1302DV25

 

 

 

 

 

 

Revision Number (31:29)

 

000

 

 

Version number.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cypress Device ID (28:12)

 

01011010010010110

 

Defines the type of SRAM.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cypress JEDEC ID (11:1)

 

00000110100

 

Allows unique identification of SRAM vendor.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ID Register Presence (0)

 

1

 

 

Indicate the presence of an ID register.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document #: 38-05625 Rev. *A

Page 10 of 18

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Contents Logic Block Diagram CY7C1302DV25 FeaturesConfigurations Functional DescriptionSelection Guide Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutPin Definitions Introduction Application Example1 Operation Write Cycle Descriptions 2,8Comments Ieee 1149.1 Serial Boundary Scan Jtag Sample Z TAP Controller State Diagram9 EXIT2-IR UPDATE-DR UPDATE-IRParameter Description Min Max Unit TAP Controller Block DiagramParameter Description Test Conditions Min Max Unit Set-up TimesTAP Timing and Test Conditions12 Identification Register DefinitionsRegister Name Bit Size Scan Register SizesInstruction Codes Instruction Code DescriptionBoundary Scan Order Bit # Bump IDOperating Range Range Ambient Temperature TMaximum Ratings Parameter Description Test Conditions Min Typ Max UnitCapacitance20 Switching Characteristics Over the Operating RangeThermal Resistance20 AC Test Loads and WaveformsClock Rise Active to Active Switching Characteristics Over the Operating RangeClock Rise or K/K in single clock mode to Data Valid Rise to High-Z Active to High-Z 23Switching Waveforms25, 26 Write Read NOPCY7C1302DV25-167BZXC Package DiagramOrdering Information CY7C1302DV25-167BZXIIssue Date Orig. Description of Change Document History

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.