Cypress CY7C1302DV25 manual Thermal Resistance20, Capacitance20, AC Test Loads and Waveforms

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CY7C1302DV25

Thermal Resistance[20]

Parameter

Description

Test Conditions

165 FBGA Package

Unit

ΘJA

Thermal Resistance (Junction to Ambient)

Test conditions follow standard test

16.7

°C/W

 

 

methods and procedures for measuring

 

 

ΘJC

Thermal Resistance (Junction to Case)

2.5

°C/W

thermal impedance, per EIA/JESD51.

Capacitance[20]

Parameter

Description

Test Conditions

Max.

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

5

pF

 

 

VDD = 2.5V.

 

 

CCLK

Clock Input Capacitance

6

pF

 

 

VDDQ = 1.5V

 

 

CO

Output Capacitance

7

pF

 

AC Test Loads and Waveforms

VREF = 0.75V

VREF

 

 

 

 

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

Z0 = 50

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

Under

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

 

 

 

 

 

 

 

ZQ

RQ =

250

(a)

RL = 50

VREF = 0.75V

VREF

 

 

 

0.75V

 

 

 

R = 50

[21]

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

5 pF 0.25V

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Under

ZQ

 

 

 

 

 

 

 

 

 

Slew Rate = 2 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

RQ =

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250

(b)

Switching Characteristics Over the Operating Range [21]

Cypress

Consortium

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

167 MHz

 

Parameter

Parameter

 

 

 

 

 

 

 

 

 

 

 

Description

Min.

Max.

Unit

tPower[22]

 

VCC (typical) to the First Access Read or Write

10

 

s

Cycle Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

6.0

 

ns

tKH

tKHKL

Input Clock (K/K

and C/C) HIGH

2.4

 

ns

tKL

tKLKH

Input Clock (K/K

and C/C) LOW

2.4

 

ns

tKHKH

tKHKH

K/K

Clock Rise to K/K Clock Rise and C/C to C/C Rise (rising edge

2.7

3.3

ns

 

 

to rising edge)

 

 

 

tKHCH

tKHCH

K/K

Clock Rise to C/C Clock Rise (rising edge to rising edge)

0.0

2.0

ns

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tSA

Address Set-up to Clock (K and

K) Rise

0.7

 

ns

tSC

tSC

Control Set-up to Clock (K and

K) Rise (RPS, WPS, BWS0, BWS1)

0.7

 

ns

tSD

tSD

D[17:0] Set-up to Clock (K and

K) Rise

0.7

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tHA

Address Hold after Clock (K and

K) Rise

0.7

 

ns

tHC

tHC

Control Signals Hold

after

Clock (K and

K) Rise

0.7

 

ns

 

 

(RPS, WPS, BWS0, BWS1)

 

 

 

tHD

tHD

D[17:0] Hold after Clock (K and

K) Rise

0.7

 

ns

Notes:

20.Tested initially and after any design or process change that may affect these parameters.

21.Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V,Vref = 0.75V, RQ = 250W, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC test loads.

22.This part has a voltage regulator that steps down the voltage internally; tPower is the time power needs to be supplied above VDD minimum initially before a read or write operation can be initiated.

Document #: 38-05625 Rev. *A

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Contents Logic Block Diagram CY7C1302DV25 FeaturesConfigurations Functional DescriptionPin Definitions Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutSelection Guide Introduction Application Example1 Comments Write Cycle Descriptions 2,8Operation Ieee 1149.1 Serial Boundary Scan Jtag Sample Z TAP Controller State Diagram9 EXIT2-IR UPDATE-DR UPDATE-IRParameter Description Min Max Unit TAP Controller Block DiagramParameter Description Test Conditions Min Max Unit Set-up TimesTAP Timing and Test Conditions12 Identification Register DefinitionsRegister Name Bit Size Scan Register SizesInstruction Codes Instruction Code DescriptionBoundary Scan Order Bit # Bump IDOperating Range Range Ambient Temperature TMaximum Ratings Parameter Description Test Conditions Min Typ Max UnitCapacitance20 Switching Characteristics Over the Operating RangeThermal Resistance20 AC Test Loads and WaveformsClock Rise Active to Active Switching Characteristics Over the Operating RangeClock Rise or K/K in single clock mode to Data Valid Rise to High-Z Active to High-Z 23Switching Waveforms25, 26 Write Read NOPCY7C1302DV25-167BZXC Package DiagramOrdering Information CY7C1302DV25-167BZXIIssue Date Orig. Description of Change Document History

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.