Cypress CY7C1302DV25 manual Write Cycle Descriptions 2,8, Operation, Comments

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CY7C1302DV25

 

Truth Table[2, 3, 4, 5, 6, 7]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operation

 

 

 

 

 

 

 

K

 

RPS

 

 

WPS

 

DQ

 

DQ

Write Cycle:

 

 

 

 

 

 

 

 

L-H

 

X

 

L

 

D(A+0) at K(t) ↑

 

D(A+1) at

 

 

 

 

 

 

 

 

 

 

 

K(t) ↑

Load address on the rising edge of

K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

clock; input write data on K and K rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

 

 

 

 

 

 

 

 

L-H

 

L

 

X

 

Q(A+0) at C(t+1)↑

 

Q(A+1) at

 

 

 

 

 

 

 

 

 

 

 

 

C(t+1) ↑

Load address on the rising edge of K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

clock; wait one cycle; read data on 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

consecutive C and C rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

 

 

 

 

 

 

 

 

L-H

 

H

 

H

 

D = X

 

D = X

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q = High-Z

 

Q = High-Z

Standby: Clock Stopped

 

 

 

 

 

 

 

Stopped

 

X

 

X

 

Previous State

 

Previous State

Write Cycle Descriptions[2,8]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BWS

0

 

BWS

1

 

K

 

 

 

K

 

 

 

 

 

 

 

 

Comments

 

 

 

 

 

 

 

 

L

 

 

L

 

L-H

 

 

 

–

During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.

 

L

 

 

L

 

–

 

 

L-H

During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.

 

L

 

 

H

 

L-H

 

 

 

–

During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

device. D[17:9] remains unaltered.

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

–

 

 

L-H

During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

device. D[17:9] remains unaltered.

 

 

 

 

 

 

 

 

 

 

H

 

 

L

 

L-H

 

 

 

–

During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D[8:0] remains unaltered.

 

 

 

 

 

 

 

 

 

 

 

H

 

 

L

 

–

 

 

L-H

During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D[8:0] remains unaltered.

 

 

 

 

 

 

 

 

 

 

 

H

 

 

H

 

L-H

 

 

 

–

No data is written into the device during this portion of a Write operation.

 

H

 

 

H

 

–

 

 

L-H

No data is written into the device during this portion of a Write operation.

Notes:

2.X = Don't Care, H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.

3.Device will power-up deselected and the outputs in a three-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A+0, A+1 represent the addresses sequence in the burst.

5.“t” represents the cycle at which a Read/Write operation is started. t+1 is the first clock cycle succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 38-05625

8.Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. BWS0, BWS1 can be altered on different portions of a Write cycle, as long as the set-up and hold requirements are achieved. 38-05625

Document #: 38-05625 Rev. *A

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Contents Configurations FeaturesLogic Block Diagram CY7C1302DV25 Functional DescriptionPin Definitions Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutSelection Guide Introduction Application Example1 Comments Write Cycle Descriptions 2,8Operation Ieee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram9Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramParameter Description Min Max Unit Set-up TimesIdentification Register Definitions TAP Timing and Test Conditions12Instruction Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Bump ID Boundary Scan OrderMaximum Ratings Range Ambient Temperature TOperating Range Parameter Description Test Conditions Min Typ Max UnitThermal Resistance20 Switching Characteristics Over the Operating RangeCapacitance20 AC Test Loads and WaveformsClock Rise or K/K in single clock mode to Data Valid Switching Characteristics Over the Operating RangeClock Rise Active to Active Rise to High-Z Active to High-Z 23Write Read NOP Switching Waveforms25, 26Ordering Information Package DiagramCY7C1302DV25-167BZXC CY7C1302DV25-167BZXIDocument History Issue Date Orig. Description of Change

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.
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