Cypress CY7C1302DV25 manual Scan Register Sizes, Instruction Codes, Register Name Bit Size

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CY7C1302DV25

Scan Register Sizes

Register Name

Bit Size

Instruction

3

 

 

Bypass

1

 

 

ID

32

 

 

Boundary Scan

107

 

 

Instruction Codes

Instruction

Code

Description

EXTEST

000

Captures the Input/Output ring contents.

 

 

 

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.

 

 

This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the Input/Output contents. Places the boundary scan register between TDI and

 

 

TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

Do Not Use: This instruction is reserved for future use.

 

 

 

SAMPLE/PRELOAD

100

Captures the Input/Output ring contents. Places the boundary scan register between TDI

 

 

and TDO. Does not affect the SRAM operation.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

 

 

 

RESERVED

110

Do Not Use: This instruction is reserved for future use.

 

 

 

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect SRAM

 

 

operation.

Document #: 38-05625 Rev. *A

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Contents Functional Description FeaturesConfigurations Logic Block Diagram CY7C1302DV25Pin Definitions Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutSelection Guide Introduction Application Example1 Comments Write Cycle Descriptions 2,8Operation Ieee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram9Set-up Times TAP Controller Block DiagramParameter Description Test Conditions Min Max Unit Parameter Description Min Max UnitIdentification Register Definitions TAP Timing and Test Conditions12Instruction Code Description Scan Register SizesInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderParameter Description Test Conditions Min Typ Max Unit Range Ambient Temperature TMaximum Ratings Operating RangeAC Test Loads and Waveforms Switching Characteristics Over the Operating RangeThermal Resistance20 Capacitance20Rise to High-Z Active to High-Z 23 Switching Characteristics Over the Operating RangeClock Rise or K/K in single clock mode to Data Valid Clock Rise Active to ActiveWrite Read NOP Switching Waveforms25, 26CY7C1302DV25-167BZXI Package DiagramOrdering Information CY7C1302DV25-167BZXCDocument History Issue Date Orig. Description of Change

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.
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