Cypress CY7C1302DV25 TAP Controller Block Diagram, Parameter Description Min Max Unit, Hold Times

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CY7C1302DV25

TAP Controller Block Diagram

TDI

 

 

 

 

 

 

0

 

 

 

 

 

 

Bypass Register

 

 

Selection

 

 

 

2

1

0

Selection

TDO

Circuitry

Instruction Register

 

 

Circuitry

 

 

 

 

 

 

31

30 29 .

.

2

1

0

 

 

 

Identification Register

 

 

 

106

. .

.

.

2

1

0

 

 

 

Boundary Scan Register

 

 

 

TCK TMS

TAP Controller

TAP Electrical Characteristics Over the Operating Range [10, 13, 15]

Parameter

Description

Test Conditions

Min.

Max.

Unit

VOH1

Output HIGH Voltage

IOH = 2.0 mA

1.7

 

V

VOH2

Output HIGH Voltage

IOH = 100 A

2.1

 

V

VOL1

Output LOW Voltage

IOL = 2.0 mA

 

0.7

V

VOL2

Output LOW Voltage

IOL = 100 A

 

0.2

V

VIH

Input HIGH Voltage

 

1.7

VDD + 0.3

V

VIL

Input LOW Voltage

 

–0.3

0.7

V

IX

Input and Output Load Current

GND VI VDDQ

–5

5

A

TAP AC Switching Characteristics Over the Operating Range [11, 12]

Parameter

Description

Min.

Max.

Unit

tTCYC

TCK Clock Cycle Time

50

 

ns

tTF

TCK Clock Frequency

 

20

MHz

tTH

TCK Clock HIGH

20

 

ns

tTL

TCK Clock LOW

20

 

ns

Set-up Times

 

 

 

 

tTMSS

TMS Set-up to TCK Clock Rise

10

 

ns

tTDIS

TDI Set-up to TCK Clock Rise

10

 

ns

tCS

Capture Set-up to TCK Rise

10

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

tTMSH

TMS Hold after TCK Clock Rise

10

 

ns

tTDIH

TDI Hold after Clock Rise

10

 

ns

tCH

Capture Hold after Clock Rise

10

 

ns

Notes:

10.These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.

11.TCS and TCH refer to the set-up and hold time requirements of latching data from the boundary scan register.

12.Test conditions are specified using the load in TAP AC test conditions. Tr/Tf = 1 ns.

Document #: 38-05625 Rev. *A

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Contents Configurations FeaturesLogic Block Diagram CY7C1302DV25 Functional DescriptionPin Configuration Ball Fbga 13 x 15 x 1.4 mm Pinout Selection GuidePin Definitions Introduction Application Example1 Write Cycle Descriptions 2,8 OperationComments Ieee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram9Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramParameter Description Min Max Unit Set-up TimesIdentification Register Definitions TAP Timing and Test Conditions12Instruction Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Bump ID Boundary Scan OrderMaximum Ratings Range Ambient Temperature TOperating Range Parameter Description Test Conditions Min Typ Max UnitThermal Resistance20 Switching Characteristics Over the Operating RangeCapacitance20 AC Test Loads and WaveformsClock Rise or K/K in single clock mode to Data Valid Switching Characteristics Over the Operating RangeClock Rise Active to Active Rise to High-Z Active to High-Z 23Write Read NOP Switching Waveforms25, 26Ordering Information Package DiagramCY7C1302DV25-167BZXC CY7C1302DV25-167BZXIDocument History Issue Date Orig. Description of Change

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.