Cypress Ordering Information, Package Diagram, CY7C1302DV25-167BZXC, CY7C1302DV25-167BZXI

Page 17

CY7C1302DV25

Ordering Information

“Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or

visit www.cypress.com for actual products offered”.

Speed

Ordering Code

Package

Package Type

Operating

(MHz)

Diagram

Range

 

 

 

 

 

167

CY7C1302DV25-167BZC

51-85180

165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Commercial

 

 

 

 

 

 

CY7C1302DV25-167BZXC

 

165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead free

 

 

 

 

 

 

 

CY7C1302DV25-167BZI

 

165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Industrial

 

 

 

 

 

 

CY7C1302DV25-167BZXI

 

165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead free

 

 

 

 

 

 

Package Diagram

165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D 165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)

TOP VIEW

 

 

 

 

 

 

TOP VIEW

 

 

 

PIN 1 CORNER

 

 

 

 

 

 

 

 

 

 

PIN 1 CORNER

 

 

 

 

 

 

 

1

2

3

4

5

6

7

8

9

10

11

BOTTOM VIEW

BOTTOM VIEWPIN 1 CORNER

PIN 1 CORNER

 

 

 

 

 

Ø0.05 M C

 

 

 

 

 

 

 

 

 

 

Ø0.05 M C

 

 

 

 

 

 

 

Ø0.25 M C A B

 

 

 

 

 

 

 

Ø0.50

-0Ø0.06

.25 M C A B

 

 

 

 

 

(165X)

 

 

 

 

 

 

 

 

 

+0.14

-0.06

 

11

10

9

8

7

6

5

Ø0.50

(165X)

4

3

2

1

 

 

 

 

 

 

 

 

 

+0.14

 

15.00±0.10

15.00±0.10

A

1

2

3

4

5

6

7

8

9

10

11

B

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CB

DC

ED

FE

GF

H

G

15.00±0.10

 

 

J

H

 

K

J

 

 

 

LK

ML

NM

PN

RP R

14.00 15.00±0.10

1.00

7.0014.00

1.00

7.00

11

10

9

8

7

6

5

4

3

2

1A

BA

CB

DC

ED

FE

GF

HG

JH

KJ

LK

ML

NM

PN

RP

R

A

0.25 C

A

0.3600.25.3±0C .05

A

B

13.00±0.10

 

 

B

13.00±0.10

 

 

0.53±0.05

1.40 MAX.

0.15 C 1.40 MAX.

0.15 C

C

SEATING PLANE

 

 

SEATING PLANE

 

 

 

 

 

0.36

C

 

 

0.35±0.06

0.35±0.06

 

 

1.00

A

5.00

1.00

 

5.00

 

10.00

 

10.00

B

13.00±0.10

B

13.00±0.10

0.15(4X)

 

0.15(4X)

 

NOTES :

 

SOLDERNOTESPAD TYPE: : NON-SOLDER MASK DEFINED (NSMD)

PACKAGESOLDERW IGHTPAD: 0TYPE.475g: NON-SOLDER MASK DEFINED (NSMD)

JEDEC REFERENCEPACKAGE WEIGHT: MO-216: 0./475gDESIGN 4.6C

PACKAGEJEDECODEREFERENCE: BB0AC : MO-216 / DESIGN 4.6C

PACKAGE CODE : BB0AC

51-85180-*A

51-85180-*A

Quad Data Rate SRAM and QDR SRAM comprise a new family of products developed by Cypress, IDT, NEC, Renesas and Samsung. All product and company names mentioned in this document are trademarks of their respective holders.

Document #: 38-05625 Rev. *A

Page 17 of 18

© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

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Contents Configurations FeaturesLogic Block Diagram CY7C1302DV25 Functional DescriptionPin Definitions Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutSelection Guide Introduction Application Example1 Comments Write Cycle Descriptions 2,8Operation Ieee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram9Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramParameter Description Min Max Unit Set-up TimesIdentification Register Definitions TAP Timing and Test Conditions12Instruction Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Bump ID Boundary Scan OrderMaximum Ratings Range Ambient Temperature TOperating Range Parameter Description Test Conditions Min Typ Max UnitThermal Resistance20 Switching Characteristics Over the Operating RangeCapacitance20 AC Test Loads and WaveformsClock Rise or K/K in single clock mode to Data Valid Switching Characteristics Over the Operating RangeClock Rise Active to Active Rise to High-Z Active to High-Z 23Write Read NOP Switching Waveforms25, 26Ordering Information Package DiagramCY7C1302DV25-167BZXC CY7C1302DV25-167BZXIDocument History Issue Date Orig. Description of Change

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.