Cypress CY7C09099V, CY7C09179V, CY7C09199V, CY7C09089V manual Features, Logic Block Diagram

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CY7C09079V/89V/99V

CY7C09179V/89V/99V

CY7C09079V/89V/99V

CY7C09179V/89V/99V

3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM

Features

■True Dual-Ported memory cells which enable simultaneous access of the same memory location

■6 Flow-Through and Pipelined devices

■32K x 8/9 organizations (CY7C09079V/179V)

■64K x 8/9 organizations (CY7C09089V/189V)

■128K x 8/9 organizations (CY7C09099V/199V)

■3 Modes

■Flow-Through

■Pipelined

■Burst

■Pipelined output mode on both ports enables fast 100 MHz operation

■0.35-micron CMOS for optimum speed and power

■High speed clock to data access 6.5[1]/7.5[1]/9/12 ns (max.)

■3.3V low operating power

■Active= 115 mA (typical)

■Standby= 10 μA (typical)

■Fully synchronous interface for easier operation

■Burst counters increment addresses internally

■Shorten cycle times

■Minimize bus noise

■Supported in Flow-Through and Pipelined modes

■Dual Chip Enables for easy depth expansion

■Automatic power down

■Commercial and Industrial temperature ranges

■Available in 100-pin TQFP

■Pb-free packages available

Logic Block Diagram

 

 

 

 

 

 

R/WL

 

 

 

 

 

 

 

R/WR

OEL

 

 

 

 

 

 

 

 

OER

CE0L

 

1

 

 

 

1

 

CE0R

CE1L

 

0

 

 

 

0

 

CE1R

 

 

 

0/1

 

 

 

0/1

 

 

FT/PipeL

 

0/11

0

 

0

10/1

FT/PipeR

 

 

 

 

 

 

I/O

[2]

8/9

 

 

 

8/9

 

–I/O[2]

–I/O

7/8L

 

 

 

 

I/O

0R

0L

 

 

 

I/O

I/O

 

7/8R

 

 

 

 

 

 

 

 

 

 

 

 

 

Control

Control

 

 

 

A0–A[3]14/15/16L

15/16/17

 

 

 

15/16/17

 

 

Counter/

 

 

A0–A14/15/16R[3]

CLKL

 

 

Counter/

 

CLKR

 

Address

True Dual-Ported

Address

 

ADSL

 

 

ADSR

 

Register

RAM Array

Register

 

CNTENL

 

Decode

 

 

Decode

CNTENR

CNTRSTL

 

 

 

 

CNTRSTR

Notes

 

 

 

 

 

 

 

 

 

1. See page 6 for Load Conditions.

 

 

 

 

 

 

2. I/O0–I/O7for x8 devices, I/O0–I/O8for x9 devices.

 

 

 

 

 

3. A0–A14for 32K, A0–A15for 64K, and A0–A16for 128K devices.

 

 

 

 

Cypress Semiconductor Corporation • 198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-06043 Rev. *C

 

Revised December 10, 2008

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Contents Logic Block Diagram FeaturesCypress Semiconductor Corporation 198 Champion Court Functional Description Pin ConfigurationsO2R VCC O3R O4R O5R O6R O7R O8R Pin Definitions Selection GuideDescription CY7C09079V/89V/99V CY7C09179V/89V/99VMaximum Ratings Electrical Characteristics Over the Operating RangeOperating Range CapacitanceALL Inputpulses Used for t CKLZ, t OLZ, & t OHZLoad 1 -6 and -7 only OutputPort to Port Delays Switching Characteristics Over the Operating RangeADS CntenAddress CLKData OUT Dataout Switching WaveformsClkl ADDRESSB1Datainl Valid CLK R Addressl MatchAddress R Match Data Outr ValidCE1 CLK CE0Data Read no Operation Write ReadRead Write Pipelined Read-to-Write-to-Read OE Controlled19, 26, 27Read Write Operation Flow-Through Read-to-Write-to-Read OE = VIL17, 19, 26, 27Read ADSRead with Counter Counter Hold External Address Read Counter Hold External Read with Counter With AddressADS Cnten Address InternalData Data OUT Counter Write Read Reset Address Counter Reset Pipelined Outputs19, 26, 32Mode Operation Read/Write and Enable Operation34, 35 Inputs Outputs0 -I/O Operation Address Counter Control Operation 34, 38, 39 PreviousSpeed ns Ordering Code Ordering InformationPackage Type Operating Range 64K x9 3.3V Synchronous Dual-Port Sram Pin Thin Plastic Quad Flat Pack Tqfp A100 Package DiagramDocument History Sales, Solutions, and Legal InformationDocument Number Rev ECN No Orig. Description of Change

CY7C09089V, CY7C09189V, CY7C09179V, CY7C09079V, CY7C09199V specifications

Cypress Semiconductor has developed a series of high-performance static random-access memory (SRAM) chips, including the CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V. These SRAM products are designed for a wide array of applications, ranging from telecommunications and networking to consumer electronics, due to their high speed, low latency, and reliable performance.

One of the most notable features of these CY7C series devices is their high-density configuration. These chips generally offer densities ranging from 256Kb to 16Mb, making them suitable for various applications requiring significant memory capacity without sacrificing speed. Additionally, they typically incorporate a low-power architecture, allowing for efficient energy consumption, which is crucial in battery-operated devices.

The CY7C09099V and CY7C09199V variants are particularly noted for their high-speed access times, achieving data rate performance levels that meet the stringent requirements of modern computing tasks. The read and write access times can vary from 10ns to 15ns, ensuring that these devices can handle fast data processing demands. Their robust performance is complemented by features such as a single supply voltage that simplifies circuit design while providing ease of integration into various systems.

One of the advanced technologies used in these SRAM devices is the asynchronous read and write operation. This technology allows the memory to provide quick data retrieval and storage without the need for complex timing sequences, enhancing overall system responsiveness. Moreover, the chips feature a common data input/output interface, which simplifies communication protocols and reduces design complexity.

Another essential characteristic of the CY7C series is their wide operating temperature range, making them suitable for industrial applications. The ability to operate in diverse environmental conditions increases their reliability across different sectors. Embedded parity checking within the memory architecture helps to detect and correct errors, further ensuring data integrity.

Overall, Cypress’s CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V SRAM devices represent a significant advancement in memory technology. With a blend of high-speed performance, low power consumption, and robust reliability, they are designed to meet the evolving needs of modern electronic applications, providing designers with a reliable solution for high-performance memory requirements.
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