Cypress CY7C09089V, CY7C09179V, CY7C09099V, CY7C09199V, CY7C09079V manual Address Internal, ADS Cnten

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CY7C09079V/89V/99V

CY7C09179V/89V/99V

Switching Waveforms (continued)

Figure 16. Write with Address Counter Advance (Flow-Through or Pipelined Outputs)[30, 31]

tCYC2

CLK

tCH2

tCL2

tSA

tHA

ADDRESS

INTERNAL

An+1

An+2

An+3

An+4

ADDRESS

tSAD

tHAD

CNTEN

tSCN

tHCN

DATAIN

Dn+1

Dn+2

Dn+3

Dn+4

tSD

tHD

WRITE EXTERNAL

WRITE WITH

WRITE COUNTER

WRITE WITH COUNTER

ADDRESS

COUNTER

HOLD

Notes

30.CE0 and R/W = VIL; CE1 and CNTRST = VIH.

31.The “Internal Address” is equal to the “External Address” when ADS = VIL and equals the counter output when ADS = VIH.

Document #: 38-06043 Rev. *C

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Contents Features Logic Block DiagramCypress Semiconductor Corporation 198 Champion Court Functional Description Pin ConfigurationsO2R VCC O3R O4R O5R O6R O7R O8R CY7C09179V/89V/99V Selection GuidePin Definitions Description CY7C09079V/89V/99VCapacitance Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeOutput Used for t CKLZ, t OLZ, & t OHZALL Inputpulses Load 1 -6 and -7 onlyCnten Switching Characteristics Over the Operating RangePort to Port Delays ADSCLK AddressData OUT ADDRESSB1 Switching WaveformsDataout ClklData Outr Valid Addressl MatchDatainl Valid CLK R Address R MatchRead no Operation Write Read CLK CE0CE1 DataRead Write Pipelined Read-to-Write-to-Read OE Controlled19, 26, 27Read Write Operation Flow-Through Read-to-Write-to-Read OE = VIL17, 19, 26, 27Read Counter Hold External Read with Counter With Address ADSRead Read with Counter Counter Hold External AddressADS Cnten Address InternalData Data OUT Counter Write Read Reset Address Counter Reset Pipelined Outputs19, 26, 32Address Counter Control Operation 34, 38, 39 Previous Read/Write and Enable Operation34, 35 Inputs OutputsMode Operation 0 -I/O OperationOrdering Information Speed ns Ordering CodePackage Type Operating Range 64K x9 3.3V Synchronous Dual-Port Sram Pin Thin Plastic Quad Flat Pack Tqfp A100 Package DiagramSales, Solutions, and Legal Information Document HistoryDocument Number Rev ECN No Orig. Description of Change

CY7C09089V, CY7C09189V, CY7C09179V, CY7C09079V, CY7C09199V specifications

Cypress Semiconductor has developed a series of high-performance static random-access memory (SRAM) chips, including the CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V. These SRAM products are designed for a wide array of applications, ranging from telecommunications and networking to consumer electronics, due to their high speed, low latency, and reliable performance.

One of the most notable features of these CY7C series devices is their high-density configuration. These chips generally offer densities ranging from 256Kb to 16Mb, making them suitable for various applications requiring significant memory capacity without sacrificing speed. Additionally, they typically incorporate a low-power architecture, allowing for efficient energy consumption, which is crucial in battery-operated devices.

The CY7C09099V and CY7C09199V variants are particularly noted for their high-speed access times, achieving data rate performance levels that meet the stringent requirements of modern computing tasks. The read and write access times can vary from 10ns to 15ns, ensuring that these devices can handle fast data processing demands. Their robust performance is complemented by features such as a single supply voltage that simplifies circuit design while providing ease of integration into various systems.

One of the advanced technologies used in these SRAM devices is the asynchronous read and write operation. This technology allows the memory to provide quick data retrieval and storage without the need for complex timing sequences, enhancing overall system responsiveness. Moreover, the chips feature a common data input/output interface, which simplifies communication protocols and reduces design complexity.

Another essential characteristic of the CY7C series is their wide operating temperature range, making them suitable for industrial applications. The ability to operate in diverse environmental conditions increases their reliability across different sectors. Embedded parity checking within the memory architecture helps to detect and correct errors, further ensuring data integrity.

Overall, Cypress’s CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V SRAM devices represent a significant advancement in memory technology. With a blend of high-speed performance, low power consumption, and robust reliability, they are designed to meet the evolving needs of modern electronic applications, providing designers with a reliable solution for high-performance memory requirements.