Cypress CY7C09179V Used for t CKLZ, t OLZ, & t OHZ, ALL Inputpulses, Load 1 -6 and -7 only, Gnd

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CY7C09079V/89V/99V

CY7C09179V/89V/99V

Figure 3. AC Test Loads

OUTPUT

C = 30 pF

3.3V

R1 = 590Ω

OUTPUT

C = 30 pF

R2 = 435Ω

RTH = 250Ω

OUTPUT

C = 5 pF

VTH = 1.4V

3.3V

R1 = 590Ω

R2 = 435Ω

(a) Normal Load (Load 1)

(b) Thévenin Equivalent (Load 1)

 

 

 

 

 

 

(c) Three-State Delay(Load 2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(Used for tCKLZ, tOLZ, & tOHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

including scope and jig)

 

 

 

 

 

 

 

 

 

 

 

 

Figure 4. AC Test Loads (Applicable to -6 and -7 only)[13]

 

 

 

 

 

 

 

Z0 = 50Ω R = 50Ω

 

 

 

 

 

ALL INPUTPULSES

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

90%

 

C

 

 

 

 

 

 

 

 

 

 

GND

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

≤ 3 ns

 

 

 

 

 

 

 

 

 

 

 

 

VTH = 1.4V

 

≤ 3 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a) Load 1 (-6 and -7 only)

Figure 5. Load Derating Curve

 

0. 60

 

 

 

 

 

 

0. 50

 

 

 

 

 

times

0. 40

 

 

 

 

 

 

 

 

 

 

 

-7 access

0. 30

 

 

 

 

 

 

 

 

 

 

 

for all

0. 20

 

 

 

 

 

 

 

 

 

 

 

Δ (ns)

0. 1 0

 

 

 

 

 

 

 

 

 

 

 

 

0. 00

 

 

 

 

 

 

1 0

1 5

20

25

30

35

Capacitance (pF)

Note

13. Test Conditions: C = 10 pF.

Document #: 38-06043 Rev. *C

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Contents Features Logic Block DiagramCypress Semiconductor Corporation 198 Champion Court Pin Configurations Functional DescriptionO2R VCC O3R O4R O5R O6R O7R O8R Description CY7C09079V/89V/99V Selection GuidePin Definitions CY7C09179V/89V/99VOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings CapacitanceLoad 1 -6 and -7 only Used for t CKLZ, t OLZ, & t OHZALL Inputpulses OutputADS Switching Characteristics Over the Operating RangePort to Port Delays CntenCLK AddressData OUT Clkl Switching WaveformsDataout ADDRESSB1Address R Match Addressl MatchDatainl Valid CLK R Data Outr ValidData CLK CE0CE1 Read no Operation Write ReadPipelined Read-to-Write-to-Read OE Controlled19, 26, 27 Read WriteFlow-Through Read-to-Write-to-Read OE = VIL17, 19, 26, 27 Read Write OperationRead with Counter Counter Hold External Address ADSRead Read Counter Hold External Read with Counter With AddressAddress Internal ADS CntenCounter Reset Pipelined Outputs19, 26, 32 Data Data OUT Counter Write Read Reset Address0 -I/O Operation Read/Write and Enable Operation34, 35 Inputs OutputsMode Operation Address Counter Control Operation 34, 38, 39 PreviousOrdering Information Speed ns Ordering CodePackage Type Operating Range 64K x9 3.3V Synchronous Dual-Port Sram Package Diagram Pin Thin Plastic Quad Flat Pack Tqfp A100Sales, Solutions, and Legal Information Document HistoryDocument Number Rev ECN No Orig. Description of Change

CY7C09089V, CY7C09189V, CY7C09179V, CY7C09079V, CY7C09199V specifications

Cypress Semiconductor has developed a series of high-performance static random-access memory (SRAM) chips, including the CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V. These SRAM products are designed for a wide array of applications, ranging from telecommunications and networking to consumer electronics, due to their high speed, low latency, and reliable performance.

One of the most notable features of these CY7C series devices is their high-density configuration. These chips generally offer densities ranging from 256Kb to 16Mb, making them suitable for various applications requiring significant memory capacity without sacrificing speed. Additionally, they typically incorporate a low-power architecture, allowing for efficient energy consumption, which is crucial in battery-operated devices.

The CY7C09099V and CY7C09199V variants are particularly noted for their high-speed access times, achieving data rate performance levels that meet the stringent requirements of modern computing tasks. The read and write access times can vary from 10ns to 15ns, ensuring that these devices can handle fast data processing demands. Their robust performance is complemented by features such as a single supply voltage that simplifies circuit design while providing ease of integration into various systems.

One of the advanced technologies used in these SRAM devices is the asynchronous read and write operation. This technology allows the memory to provide quick data retrieval and storage without the need for complex timing sequences, enhancing overall system responsiveness. Moreover, the chips feature a common data input/output interface, which simplifies communication protocols and reduces design complexity.

Another essential characteristic of the CY7C series is their wide operating temperature range, making them suitable for industrial applications. The ability to operate in diverse environmental conditions increases their reliability across different sectors. Embedded parity checking within the memory architecture helps to detect and correct errors, further ensuring data integrity.

Overall, Cypress’s CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V SRAM devices represent a significant advancement in memory technology. With a blend of high-speed performance, low power consumption, and robust reliability, they are designed to meet the evolving needs of modern electronic applications, providing designers with a reliable solution for high-performance memory requirements.
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