Cypress CY62147DV18 manual Thermal Resistance, AC Test Loads and Waveforms, Bga

CY62147DV18

MoBL2™

Electrical Characteristics Over the Operating Range (continued)

CY62147DV18-55

CY62147DV18-70

Parameter

Description

Test Conditions

Min.

Typ.[7]

Max.

Min.

Typ.[7]

Max.

Unit

ISB1

Automatic CE

CE

> VCC−0.2V,

VCC(max)=1.95V

L

0.5

12

0.5

12

∝A

Power-Down

VIN>VCC–0.2V,

LL

8

8

Current —

VIN<0.2V); f = fMAX

VCC(max)=2.25V

L

0.5

18

0.5

18

CMOS Inputs

(Address and Data

Only), f = 0 (OE,

LL

12

12

WE, BHE and BLE)

ISB2

Automatic CE

CE

> VCC – 0.2V,

VCC(max)=1.95V

L

0.5

12

0.5

12

∝A

Power-down

VIN > VCC – 0.2V or

LL

8

8

Current —

VIN < 0.2V, f = 0

VCC(max)=2.25V

L

0.5

18

0.5

18

CMOS Inputs

LL

12

12

Capacitance for all Packages[8]

Parameter

Description

Test Conditions

Max.

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

VCC = VCC(typ)

COUT

Output Capacitance

10

pF

Thermal Resistance

Parameter

Description

Test Conditions

BGA

Unit

ΘJA

Thermal Resistance

Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit

75

°C/W

(Junction to Ambient)[8]

board

ΘJC

Thermal Resistance

10

°C/W

(Junction to Case)[8]

AC Test Loads and Waveforms

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

	VCC		ALL INPUT PULSES
						90%
	10%		90%				10%
	GND
R2	Rise Time = 1 V/ns						Fall Time = 1 V/ns
	Equivalent to:			THÉVENIN EQUIVALENT
					RTH
		OUTPUT						V

Parameters	1.80V	Unit
R1	13500	Ω
R2	10800	Ω
RTH	6000	Ω
VTH	0.80	V

Data Retention Characteristics (Over the Operating Range)

Parameter	Description		Conditions			Min.	Typ.[7]	Max.	Unit
VDR	VCC for Data Retention					1.0			V
ICCDR	Data Retention Current	VCC= 1.0V	CE	> VCC – 0.2V,	L			6	∝A
		VIN > VCC – 0.2V or VIN < 0.2V
					LL			4
tCDR[8]	Chip Deselect to Data Retention Time					0			ns
tR	Operation Recovery Time					tRC			ns

Notes:

8.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05343 Rev. *B Page 4 of 11

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