Cypress CY62147DV18 manual Write Cycle No WE Controlled, OE LOW18

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CY62147DV18

MoBL2™

Write Cycle No. 3 (WE Controlled, OE LOW)[18]

		tWC
ADDRESS
		tSCE
CE
BHE/BLE		tBW
	tAW		tHA
	tSA	tPWE
WE
		tSD	tHD
DATAI/O	NOTE 19	DATAIN
	tHZWE		tLZWE
Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) [18]

Document #: 38-05343 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesFunctional Description1 Pin Configuration2, 3 Fbga Top ViewElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Product PortfolioData Retention Characteristics Over the Operating Range Thermal ResistanceAC Test Loads and Waveforms BGASwitching Characteristics Over the Operating Range Data Retention Waveform55 ns 70 ns Parameter Description Min Max Unit Read Cycle Write CycleRead Cycle No OE Controlled 15 Switching WaveformsRead Cycle 1 Address Transition Controlled14 Write Cycle No WE Controlled13, 17 Write Cycle No CE Controlled13, 17Write Cycle No WE Controlled, OE LOW18 Write Cycle No BHE/BLE Controlled, OE LOWBHE BLE Inputs/Outputs Mode PowerOrdering Information Package Diagram Lead Vfbga 6 x 8 x 1 mm BV48AREV ECN no Issue Orig. Description of Change DateDocument History