Cypress CY62158EV30 manual Features, Logic Block Diagram Functional Description

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CY62158EV30 MoBL

8-Mbit (1024K x 8) Static RAM

Features

Very high speed: 45 ns

Wide voltage range: 2.20V–3.60V

Pin compatible with CY62158DV30

Ultra low standby power

Typical standby current: 2 A

Maximum standby current: 8 A

Ultra low active power

Typical active current: 1.8 mA @ f = 1 MHz

Easy memory expansion with CE1, CE2, and OE features

Automatic power down when deselected

CMOS for optimum speed/power

Offered in Pb-free 48-ball VFBGA, 44-pin TSOP II and 48-pin TSOP I packages[1]

Logic Block Diagram

Functional Description [2]

The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in

progress (CE1 LOW and CE2 HIGH and WE LOW).

To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A19).

To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins. See the “Truth Table” on page 8 for a complete description of read and write modes.

 

A0

 

DATA IN DRIVERS

 

IO

 

A1

 

 

 

 

 

 

 

 

0

 

A2

 

 

 

 

 

 

 

 

IO

 

A6

DECODER

 

1024K x 8

 

AMPS

1

 

 

 

IO3

 

A3

 

 

 

 

 

 

 

 

 

 

A4

 

 

 

 

 

 

 

 

IO

 

A5

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

A7

ROW

 

ARRAY

 

 

SENSE

IO4

 

A9

 

 

 

 

A8

 

 

 

 

 

 

A10

 

 

 

 

 

 

 

 

IO5

 

A11

 

 

 

 

 

 

 

 

 

CE1

A12

 

 

 

 

 

 

 

 

IO6

 

 

 

 

 

 

 

 

 

IO7

CE2

WE

COLUMN DECODER

POWER

 

 

 

 

 

 

 

 

DOWN

 

 

OE

13

14

15

16

17

18

19

 

 

 

 

 

 

 

 

A

A

A

A

A

A

A

 

 

Notes

1.For 48 pin TSOP I pin configuration and ordering information, please refer to CY62157EV30 Data sheet.

2.For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05578 Rev. *D

 

Revised April 19, 2007

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Contents Logic Block Diagram Functional Description FeaturesCypress Semiconductor Corporation Champion Court San Jose , CA Document # 38-05578 Rev. *DProduct Portfolio Pin ConfigurationsBall Vfbga Pin TsopiiMaximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Capacitance9Thermal Resistance9 Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention WaveformRead Cycle Parameter Description 45 ns Unit MinWrite Cycle Read Cycle No Address Transition Controlled15 Switching WaveformsRead Cycle No OE Controlled16 Write Cycle No CE1 or CE2 Controlled14, 18 Write Cycle No WE Controlled14, 18Truth Table Inputs/Outputs Mode PowerOrdering Information Write Cycle No WE Controlled, OE LOW19Ball Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II Document History Issue Date Orig. Description of Change