Cypress manual Document History, Document Title CY62148E MoBL , 4-Mbit 512K x 8 Static RAM

Page 10

CY62148E MoBL®

Document History Page

Document Title: CY62148E MoBL®, 4-Mbit (512K x 8) Static RAM

Document Number: 38-05442

 

 

 

REV.

ECN NO.

Issue

Orig. of

 

Description of Change

Date

Change

 

 

 

 

 

**

201580

01/08/04

AJU

New Data Sheet

 

 

 

 

 

*A

249276

See ECN

SYT

Changed from Advance Information to Preliminary

 

 

 

 

Moved Product Portfolio to Page 2

 

 

 

 

Added RTSOP II and Removed FBGA Package

 

 

 

 

Changed VCC stabilization time in footnote #7 from 100 s to 200 s

 

 

 

 

Changed ICCDR from 2.0 A to 2.5 A

 

 

 

 

Changed typo in Data Retention Characteristics(tR) from 100 s to tRC ns

 

 

 

 

Changed tOHA from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin

 

 

 

 

Changed tHZOE, tHZWE from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for 45

 

 

 

 

ns Speed Bin

 

 

 

 

 

Changed tSCE from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns Speed

 

 

 

 

Bin

 

 

 

 

 

Changed tHZCE from 12 to18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns

 

 

 

 

Speed Bin

 

 

 

 

 

Changed tSD from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for

 

 

 

 

45 ns Speed Bin

 

 

 

 

Changed tDOE from 15 to 18 ns for 35 ns Speed Bin

 

 

 

 

Corrected typo in Package Name

 

 

 

 

Changed Ordering Information to include Pb-Free Packages

*B

414820

See ECN

ZSD

Changed from Preliminary to Final

 

 

 

 

Changed the address of Cypress Semiconductor Corporation on Page #1 from

 

 

 

 

“3901 North First Street” to “198 Champion Court”

 

 

 

 

Removed 35ns Speed Bin

 

 

 

 

Removed “L” version of CY62148E

 

 

 

 

Changed ICC

(Typ) value from 1.5 mA to 2 mA at f=1 MHz

 

 

 

 

Changed ICC

(Max) value from 2 mA to 2.5 mA at f=1 MHz

 

 

 

 

Changed ICC

(Typ) value from 12 mA to 15 mA at f=fmax

 

 

 

 

Removed ISB1 spec from the Electrical characteristics table

 

 

 

 

Changed ISB2 Typ values from 0.7 A to 1 A and Max values from 2.5 A to 7 A

 

 

 

 

Modified footnote #4 to include current limit

 

 

 

 

Removed redundant footnote on DNU pins

 

 

 

 

Changed the AC testload capacitance from 100 pF to 30 pF on page #4

 

 

 

 

Changed test load parameters R1, R2, RTH and VTH from 1838 , 994 ,

 

 

 

 

645 and 1.75V to 1800 , 990 , 639 and 1.77V

 

 

 

 

Changed ICCDR from 2.5 A to 7 A

 

 

 

 

Added ICCDR typical value

 

 

 

 

Changed tLZOE from 3 ns to 5 ns

 

 

 

 

Changed tLZCE and tLZWE from 6 ns to 10 ns

 

 

 

 

Changed tHZCE from 22 ns to 18 ns

 

 

 

 

Changed tPWE from 30 ns to 35 ns

 

 

 

 

Changed tSD from 22 ns to 25 ns

 

 

 

 

Updated the ordering information table and replaced Package Name column with

 

 

 

 

Package Diagram

*C

464503

See ECN

NXR

Included Automotive Range in product offering

 

 

 

 

Updated the Ordering Information

*D

485639

See ECN

VKN

Corrected the operating range to 4.5V - 5.5V on page# 3

 

 

 

 

 

*E

833080

See ECN

VKN

Added footnote #8

 

 

 

 

Added VILspec for SOIC package

*F

890962

See ECN

VKN

Added Automotive-A part and its related information

 

 

 

 

Removed Automotive-E part and its related information

 

 

 

 

Added footnote #2 related to SOIC package

 

 

 

 

Added footnote #9 related to ISB2

 

 

 

 

Added AC values for 55 ns Industrial-SOIC range

 

 

 

 

Updated Ordering Information table

Document #: 38-05442 Rev. *F

 

 

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Contents Tsop FeaturesProduct Portfolio Functional Description SoicPin Configuration 2 Logic Block DiagramPin SOIC/TSOP II Pinout Top View Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range AC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeThermal Resistance Data Retention WaveformRead Cycle Parameter Description 45 ns 55 ns Unit MinWrite Cycle Read Cycle No OE Controlled 17 Switching WaveformsRead Cycle No Address Transition Controlled 16 Write Cycle No WE Controlled, OE High During Write 19Write Cycle No CE Controlled 19 IO’s Mode PowerTruth Table Write Cycle No WE Controlled, OE LOWPackage Diagrams Ordering InformationPin 450 MIL Molded Soic Document Number Document HistoryDocument Title CY62148E MoBL , 4-Mbit 512K x 8 Static RAM REV ECN no