CY62148E MoBL®
Thermal Resistance [10]
Parameter | Description | Test Conditions | SOIC | TSOP II | Unit | |
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ΘJA | Thermal Resistance | Still Air, soldered on a 3 × 4.5 inch, | 75 | 77 | °C/W | |
| (Junction to Ambient) |
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ΘJC | Thermal Resistance |
| 10 | 13 | °C/W | |
| (Junction to Case) |
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AC Test Loads and Waveforms
R1
VCC
ALL INPUT PULSES
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
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| 3.0V |
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| 90% | |||
R2 | 10% |
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| GND |
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| Rise Time = 1 V/ns |
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Equivalent to: | THEVENIN EQUIVALENT | |||||||||||||
OUTPUT |
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| RTH |
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| V | |||||
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90%
10%
Fall Time = 1 V/ns
Parameters | 5.0V | Unit |
R1 | 1800 | Ω |
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R2 | 990 | Ω |
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RTH | 639 | Ω |
VTH | 1.77 | V |
Data Retention Characteristics (Over the Operating Range)
| Parameter | Description |
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| Min | Typ [3] | Max | Unit |
VDR | VCC for Data Retention |
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| 2 |
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ICCDR | Data Retention Current | VCC= VDR, |
| > VCC – 0.2V, |
| 1 | 7 | ∝A | ||
CE | ||||||||||
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| VIN > VCC – 0.2V or VIN < 0.2V |
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tCDR [10] | Chip Deselect to Data Retention Time |
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| 0 |
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t | [11] | Operation Recovery Time |
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| R |
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| RC |
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Data Retention Waveform
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| VCC(min) | DATA RETENTION MODE | VCC(min) | |
V | CC | V | > 2.0V | ||
| tCDR | DR |
| tR | |
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CE |
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Note
11. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 ∝s or stable at VCC(min) > 100 ∝s. |
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Document #: | Page 4 of 10 |
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