CypressSemiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 001-07141 Rev. *F Revised January 2, 2008
CY62137FV30 MoBL®
2-Mbit (128K x 16) Static RAM

Features

■Very high speed: 45 ns
■Temperature ranges
❐Industrial: –40°C to +85°C
❐Automotive-A: –40°C to +85°C
❐Automotive-E: –40°C to +125°C
■Wide voltage range: 2.20V–3.60V
■Pin compatible with CY62137CV/CV25/CV30/CV33,
CY62137V, and CY62137EV30
■Ultra low standby power
❐Typical standby current: 1 μA
❐Maximum standby current: 5 μA (Industrial)
■Ultra low active power
❐Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
■Easy memory expansion with CE and OE features
■Automatic power down when deselected
■CMOS for optimum speed and power
■Byte power down feature
■Available in Pb free 48-Ball VFBGA and 44-pin TSOP II
package

Functional Description

The CY62137FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 90% when addresses are not toggling. Placing
the device into standby mode reduces power consumption by
more than 99% when deselected (CE HIGH or both BLE and
BHE are HIGH). The input and output pins (IO0 through IO15) are
placed in a high impedance state in the following conditions:
■Deselected (CE HIGH)
■Outputs are disabled (OE HIGH
■Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
■Write operation is active (CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO0 through IO7) is written into the location
specified on the address pins (A0 through A16). If Byte High
Enable (BHE) is LOW, then data from IO pins (IO8 through IO15)
is written into the location specified on the address pins (A0
through A16).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO0 to IO7. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO8 to IO15. See the “Truth Table” on page9 for a
complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidelines.
128K x 16
RAM Array IO0–IO7
ROW DECODER
A8
A7
A6
A5
A2
COLUMN DECODER
A11
A12
A13
A14
A15
SENSE AMPS
DATA IN DRIVERS
OE
A4
A3IO8–IO15
CE
WE
BHE
A16
A0
A1
A9
A10
BLE
BHE
BLE
CE
POWER DOWN
CIRCUIT

Logic Block Diagram

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