CY62137FV30 MoBL®
Document Number: 001-07141 Rev. *F Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ...........................................................-0.3V to 3.9V
DC Voltage Applied to Outputs
in High Z state [4, 5]............................................-0.3V to 3.9V
DC Input Voltage [4, 5].......................................–0.3V to 3.9V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(MIL–STD–883, Method 3015)
Latch up Current ....................................................> 200 mA
Operating Range
Device Range Ambient
Tempe ratur e VCC [6]
CY62137FV30LL Ind’l/Auto-A –40°C to +85°C 2.2V to 3.6V
Auto-E –40°C to +125°C
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions 45 ns (Ind’l/Auto-A) 55 ns (Auto-E) Unit
Min Typ[1] Max Min Typ[1] Max
VOH Output HIGH Voltage 2.2 < VCC < 2.7 IOH = –0.1 mA 2.0 2.0 V
2.7 < VCC < 3.6 IOH = –1.0 mA 2.4 2.4 V
VOL Output LOW Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 0.4 0.4 V
2.7 < VCC < 3.6 IOL = 2.1mA 0.4 0.4 V
VIH Input HIGH Voltage 2.2 < VCC < 2.7 1.8 VCC + 0.3 1.8 VCC + 0.3 V
2.7 < VCC < 3.6 2.2 VCC + 0.3 2.2 VCC + 0.3 V
VIL Input LOW Voltage 2.2 < VCC < 2.7 –0.3 0.6 –0.3 0.6 V
2.7 < VCC < 3.6 –0.3 0.8 –0.3 0.8 V
IIX Input Leakage Current GND < VI < VCC –1 +1 –4 +4 μA
IOZ Output Leakage
Current GND < VO < VCC, Output disabled –1 +1 –4 +4 μA
ICC VCC Operating Supply
Current f = fmax = 1/tRC VCC = VCC(max)
IOUT = 0 mA
CMOS levels
13 18 15 25 mA
f = 1 MHz 1.6 2.5 2 3
ISB1 Automatic CE Power
Down Current – CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V
f = fmax (address and data only),
f = 0 (OE, WE, BHE, and BLE), VCC = 3.60V
15 120μA
ISB2 [7] Automatic CE Power
Down Current – CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
15 120μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max)=VCC+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) are tied to CMOS levels to meet the ISB2 / ICCDR specification. Other inputs can be left floating.
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