CY62137FV30 MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

Potential

-0.3V to 3.9V

DC Voltage Applied to Outputs

 

in High Z state [4, 5]

-0.3V to 3.9V

DC Input Voltage [4, 5]

–0.3V to 3.9V

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2001V

(MIL–STD–883, Method 3015)

 

Latch up Current

> 200 mA

Operating Range

Device

Range

Ambient

VCC

[6]

Temperature

 

CY62137FV30LL

Ind’l/Auto-A

–40°C to +85°C

2.2V to 3.6V

 

Auto-E

–40°C to +125°C

 

 

 

 

 

 

 

Electrical Characteristics

Over the Operating Range

Parameter

Description

 

 

 

 

 

 

 

 

 

 

Test Conditions

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

 

 

 

 

 

 

 

Min

Typ[1]

Max

Min

Typ[1]

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

2.2

< VCC <

2.7

 

IOH = –0.1 mA

2.0

 

 

2.0

 

 

V

 

 

2.7

 

< VCC <

3.6

 

IOH = –1.0 mA

2.4

 

 

2.4

 

 

V

VOL

Output LOW Voltage

2.2

< VCC <

2.7

 

IOL = 0.1 mA

 

 

0.4

 

 

0.4

V

 

 

2.7

 

< VCC <

3.6

 

IOL = 2.1mA

 

 

0.4

 

 

0.4

V

VIH

Input HIGH Voltage

2.2

< VCC <

2.7

 

 

 

 

1.8

 

VCC + 0.3

1.8

 

VCC + 0.3

V

 

 

2.7

 

< VCC <

3.6

 

 

 

 

2.2

 

VCC + 0.3

2.2

 

VCC + 0.3

V

VIL

Input LOW Voltage

2.2

 

< VCC <

2.7

 

 

 

 

–0.3

 

0.6

–0.3

 

0.6

V

 

 

2.7

 

< VCC <

3.6

 

 

 

 

–0.3

 

0.8

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

 

–1

 

+1

–4

 

+4

μA

IOZ

Output Leakage

 

GND < VO < VCC, Output disabled

–1

 

+1

–4

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating Supply

 

f = fmax = 1/tRC

 

VCC = VCC(max)

 

13

18

 

15

25

mA

 

Current

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

1.6

2.5

 

2

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

ISB1

Automatic CE Power

 

 

 

> VCC

– 0.2V,

 

 

 

 

 

1

5

 

1

20

μA

 

CE

 

 

 

 

 

Down Current – CMOS

 

VIN

> VCC

– 0.2V, VIN < 0.2V

 

 

 

 

 

 

 

 

Inputs

 

f = fmax (address and data only),

 

 

 

 

 

 

 

 

 

 

f = 0

(OE,

 

WE,

 

BHE,

and

BLE),

VCC = 3.60V

 

 

 

 

 

 

 

ISB2 [7]

Automatic CE Power

 

 

 

> VCC – 0.2V,

 

 

 

 

 

1

5

 

1

20

μA

 

CE

 

 

 

 

 

Down Current – CMOS

 

V

IN

> V

CC

– 0.2V or V < 0.2V,

 

 

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

IN

 

 

 

 

 

 

 

 

 

f = 0, VCC =

3.60V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Notes

4.VIL(min) = –2.0V for pulse durations less than 20 ns.

5.VIH(max)=VCC+0.75V for pulse durations less than 20 ns.

6.Full device AC operation assumes a minimum of 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

7.Only chip enable (CE) and byte enables (BHE and BLE) are tied to CMOS levels to meet the ISB2 / ICCDR specification. Other inputs can be left floating.

Document Number: 001-07141 Rev. *F

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Cypress CY62137FV30 manual Maximum Ratings, Electrical Characteristics, Capacitance, Device Range Ambient

CY62137FV30 specifications

The Cypress CY62137FV30 is a high-performance SRAM (Static Random Access Memory) device designed for high-speed applications. It features a 4-Mbit memory capacity organized into a 512K x 8-bit configuration, making it suitable for a wide range of embedded systems, computing, and communication applications.

One of the standout features of the CY62137FV30 is its fast access time, with speeds as low as 30 ns. This rapid response capability is essential for applications requiring fast data retrieval, such as telecommunications equipment, automotive systems, and consumer electronics where performance is critical. The device also supports a wide operating voltage range from 2.7V to 3.6V, providing flexibility for use in various power-sensitive applications.

In terms of packaging, the CY62137FV30 is available in compact form factors, allowing for designs with space constraints. It comes in standard packages such as TSOPII and SOJ, which are well-regarded in the industry for ease of integration into circuit boards.

The CY62137FV30 employs advanced CMOS technology, ensuring low power consumption while maintaining high-speed performance. This is particularly beneficial in battery-operated devices where power efficiency is a priority. The device offers both read and write cycles, allowing for seamless data operations. Additionally, the SRAM architecture supports asynchronous operations, allowing users to access memory without the need for a clock signal.

The memory is designed with built-in write protection features, enhancing data integrity during critical operations. It is compatible with various standard memory interfaces, making it easy to integrate into different system architectures. Moreover, the device can endure a significant number of read and write cycles, ensuring durability and reliability over extended use.

The CY62137FV30 also features a simple interface, with easy-to-use control signals, which facilitate straightforward integration and design flexibility. Its ability to handle dynamic data and provide quick access to stored information makes it an excellent choice for applications like networking equipment, industrial automation, and high-performance computing systems.

In summary, the Cypress CY62137FV30 is a versatile SRAM solution that combines high speed, low power consumption, and compact packaging. Its innovative technology and reliable performance make it an excellent choice for various applications requiring efficient and fast memory solutions.