CY62146DV30
Document #: 38-05339 Rev. *A Page 3 of 11

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential......................................–0.3V to + VCC(MAX) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[6, 7].........................–0.3V to VCC(MAX) + 0.3V
DC Input Voltage[6, 7].....................–0.3V to VCC(MAX) + 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA

Operating Range

Device Range
Ambient Tem-
perature (TA)V
CC[8]
CY62146DV30L Industrial –40°C to +85°C 2.20V to 3.60V
CY62146DV30LL
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
CY62146DV30-45 CY62146DV30-55 CY62146DV30-70
UnitMin. Typ.[5] Max. Min. Typ.[5] Max. Min. Typ.[5] Max.
VOH Output HIGH
Voltag e
IOH = –0.1 mAVCC = 2.20V 2.0 2.0 2.0 V
IOH = –1.0 mAVCC = 2.70V 2.4 2.4 2.4 V
VOL Output LOW
Voltag e IOL = 0.1 mA VCC = 2.20V 0.4 0.4 0.4 V
IOL = 2.1 mA VCC = 2.70V 0.4 0.4 0.4 V
VIH Input HIGH
Voltag e
VCC = 2.2V to 2.7V 1.8 VCC +
0.3V
1.8 VCC +
0.3V
1.8 VCC +
0.3V
V
VCC= 2.7V to 3.6V 2.2 VCC +
0.3V
2.2 VCC +
0.3V
2.2 VCC +
0.3V
V
VIL Input LOW
Voltag e
VCC = 2.2V to 2.7V –0.3 0.6 –0.3 0.6 –0.3 0.6 V
VCC= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 –0.3 0.8 V
IIX Input Leakage
Current
GND < VI < VCC –1 +1 –1 +1 –1 +1 µA
IOZ Output
Leakage
Current
GND < VO < VCC, Output
Disabled
–1 +1 –1 +1 –1 +1 µA
ICC VCC
Operating
Supply
Current
f = fMAX =
1/tRC
VCC = VCCmax
IOUT = 0 mA
CMOS levels
10 20 8 15 8 15 mA
f = 1 MHz 1.5 3 1.5 3 1.5 3 mA
ISB1 Automatic
CE
Power-down
Current —
CMOS
Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fMAX (Address and Data
Only),
f = 0 (OE, WE, BHE and
BLE), VCC = 3.60V
L212 212 212µA
LL 8 8 8
ISB2 Automatic
CE
Power-down
Current —
CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN <
0.2V,
f = 0, VCC = 3.60V
L212 212 212µA
LL 8 8 8
Notes:
6. VIL(min.) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
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