CY62146DV30
Document #: 38-05339 Rev. *A Page 4 of 11
Capacitance (for all packages)[9]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Thermal Resistance[9]
Parameter Description Test Conditions BGA TSOP II Unit
ΘJA Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch, four-layer
printed circuit board
72 75.13 °C/W
ΘJC Thermal Resistance
(Junction to Case)
8.86 8.95 °C/W
AC Test Loads and Waveforms[10]
Parameters 2.50V 3.0V Unit
R1 16667 1103 Ω
R2 15385 1554 Ω
RTH 8000 645 Ω
VTH 1.20 1.75 V
Data Retention Characteristics (Over the Operating Range)
Parameter Description Conditions Min. Typ.[5] Max. Unit
VDR VCC for Data Retention 1.5 V
ICCDR Data Retention Current VCC= 1.5V
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V
L9µA
LL 6
tCDR[9] Chip Deselect to Data Retention Time 0 ns
tR[11] Operation Recovery Time tRC ns
VCC
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10% 90%
10%
Rise Time = 1 V/ns Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1

Data Retention Waveform

Notes:
9. Tested initially and after any design or process changes that may affect these parameters.
10.Test condition for the 45 ns part is a load capacitance of 30 pF.
11.Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs.
VCC(min)
VCC(min)
tCDR
VDR>1.5 V
DATA RETENTION MODE
tR
VCC
CE
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