CY62167EV18 MoBL®
Document #: 38-05447 Rev. *G Page 3 of 13
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential. .........................–0.2V to 2.45V (VCC(max) + 0.2V)
DC Voltage Applied to Outputs
in High Z State[6, 7]...........–0.2V to 2.45V (VCC(max) + 0.2V)
DC Input Voltage[6, 7].......–0.2V to 2.45V (VCC(max) + 0.2V)
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch up Current......................................................>200 mA
Operating Range
Device Range Ambient
Temperature VCC[8]
CY62167EV18LL Industrial –40°C to +85°C 1 .65V to 2.25V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions 55 ns Unit
Min Typ[4] Max
VOH Output HIGH Voltage IOH = –0.1 mA 1.4 V
VOL Output LOW Voltage IOL = 0.1 mA 0.2 V
VIH Input HIGH Voltage VCC = 1.65V to 2.25V 1.4 VCC + 0.2V V
VIL Input LOW Voltage VCC = 1.65V to 2.25V –0.2 0.4 V
IIX Input Leakage Current GND < VI < VCC –1 +1 μA
IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 μA
ICC VCC Operating Supply
Current
f = fmax = 1/tRC VCC = VCC(max)
IOUT = 0 mA
CMOS levels
25 30 mA
f = 1 MHz 2.2 4.0 mA
ISB1 Automatic CE Power Down
Current – CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax(Address and Data Only),
f = 0 (OE, WE, BHE and BLE),
VCC = VCC(max)
1.5 12 μA
ISB2[9] Automatic CE Power Down
Current – CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = VCC(max)
1.5 12 μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Notes
6. VIL(min) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full Device AC operation is based on a 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.
9. Only chip enables (CE1 and CE2), and byte enables (BHE and BLE) must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
[+] Feedback