CY62167EV18 MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

Potential

–0.2V to 2.45V (VCC(max) + 0.2V)

DC Voltage Applied to Outputs

in High Z State[6, 7]

–0.2V to 2.45V (VCC(max) + 0.2V)

DC Input Voltage[6, 7]

....... –0.2V to 2.45V (VCC(max) + 0.2V)

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

>2001V

(MIL-STD-883, Method 3015)

 

 

Latch up Current

 

>200 mA

Operating Range

 

 

 

 

 

 

 

Device

 

Range

Ambient

[8]

 

Temperature

VCC

CY62167EV18LL

Industrial

–40°C to +85°C

1.65V to 2.25V

 

 

 

 

 

Electrical Characteristics

Over the Operating Range

Parameter

Description

 

 

 

Test Conditions

 

55 ns

 

Unit

 

 

 

Min

Typ[4]

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

 

 

1.4

 

 

 

V

VOL

Output LOW Voltage

IOL = 0.1 mA

 

 

 

 

 

 

0.2

V

VIH

Input HIGH Voltage

 

VCC = 1.65V to 2.25V

1.4

 

 

VCC + 0.2V

V

VIL

Input LOW Voltage

VCC = 1.65V to 2.25V

–0.2

 

 

0.4

V

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

–1

 

 

+1

μA

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

 

+1

μA

ICC

VCC Operating Supply

 

f = fmax = 1/tRC

VCC = VCC(max)

 

25

 

30

mA

 

Current

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

f = 1 MHz

 

2.2

 

4.0

mA

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

ISB1

Automatic CE Power Down

 

 

1 > VCC – 0.2V or CE2 < 0.2V

 

1.5

 

12

μA

 

CE

 

 

Current – CMOS Inputs

 

VIN > VCC – 0.2V, VIN < 0.2V)

 

 

 

 

 

 

 

 

f = fmax(Address and Data Only),

 

 

 

 

 

 

 

 

f = 0 (OE,

WE,

 

BHE

and

BLE),

 

 

 

 

 

 

 

 

 

VCC = VCC(max)

 

 

 

 

 

 

 

 

ISB2[9]

Automatic CE Power Down

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

1.5

 

12

μA

 

CE

 

 

Current – CMOS Inputs

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

f = 0, VCC = VCC(max)

 

 

 

 

 

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Notes

6.VIL(min) = –2.0V for pulse durations less than 20 ns.

7.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

8.Full Device AC operation is based on a 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

9.Only chip enables (CE1 and CE2), and byte enables (BHE and BLE) must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

Document #: 38-05447 Rev. *G

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Cypress CY62167EV18 manual Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance