CY7C106D

CY7C1006D

Pin Configuration [2]

SOJ

Top View

 

A0

 

1

28

 

 

VCC

 

 

 

A1

 

2

27

 

 

A

 

 

 

A2

 

 

 

 

17

 

 

 

3

26

 

 

A16

 

 

 

 

 

A3

 

4

25

 

 

A15

 

 

 

 

 

A4

 

5

24

 

 

A14

 

 

 

 

 

A5

 

6

23

 

 

A

 

A6

 

 

 

13

 

 

 

7

22

 

 

A12

 

 

 

A7

 

8

21

 

 

A11

 

 

 

 

 

A8

 

9

20

 

 

NC

 

 

 

A9

 

10

19

 

 

IO3

 

 

 

 

A10

 

11

18

 

 

IO2

 

 

 

 

 

CE

 

 

12

17

 

 

IO1

 

 

 

 

OE

 

13

16

 

 

IO0

 

 

GND

 

14

15

 

 

 

 

 

 

 

WE

 

 

Selection Guide

 

CY7C106D-10

Unit

 

CY7C1006D-10

 

 

 

 

 

Maximum Access Time

10

ns

 

 

 

Maximum Operating Current

80

mA

 

 

 

Maximum Standby Current

3

mA

 

 

 

Note

2. NC pins are not connected on the die.

Document #: 38-05459 Rev. *E

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Cypress manual Pin Configuration, Selection Guide, Top View, CY7C106D-10 Unit CY7C1006D-10

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.