1-Mbit (256K x 4) Static RAM

CY7C106D

CY7C1006D

CypressSemiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document #: 38-05459 Rev. *E Revised February 22, 2007

Features

• Pin- and function-compatible with CY7C106B/CY7C1006B
• High speed
—t
AA = 10 ns
• Low active power
—I
CC = 80 mA @ 10 ns
• Low CMOS standby power
—I
SB2 = 3.0 mA
• 2.0V Data Retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• CY7C106D available in Pb-free 28-pin 400-Mil wide Molded
SOJ package. CY7C1006D available in Pb-free 28-pin
300-Mil wide Molded SOJ package
Functional Description [1]
The CY7C106D and CY7C1006D are high-performance
CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip
Enable (CE), an active LOW Output Enable (OE), and tri-state
drivers. These devices have an automatic power-down feature
that reduces power consumption by more than 65% when the
devices are deselected. The four input and output pins (IO0
through IO3) are placed in a high-impedance state when:
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
• When the write operation is active (CE and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the four IO pins (IO0
through IO3) is then written into the location specified on the
address pins (A0 through A17).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the four IO pins.

Logic Block Diagram

IO0
IO1
IO2
IO3
SENSE AMPS
POWER
DOWN
CE
WE
OE
A1
A2
A3
A4
A5
A6
A7
A8
A9
ROW DECODER
256K x 4
ARRAY
INPUT BUFFER
A0
A10
A11
A12
A13
A14
A15
A16
A17
COLUMN DECODER
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
[+] Feedback