CY7C106D

CY7C1006D

Switching Waveforms (continued)

Write Cycle No. 3 (WE Controlled, OE LOW) [12, 19]

 

tWC

 

ADDRESS

 

 

 

tSCE

 

CE

 

 

tAW

 

tHA

tSA

tPWE

 

WE

 

 

 

tSD

tHD

DATA IO

DATA VALID

 

tHZWE

 

tLZWE

Truth Table

CE

OE

WE

Input/Output

Mode

Power

H

X

X

High Z

Power-Down

Standby (ISB)

L

L

H

Data Out

Read

Active (ICC)

L

X

L

Data In

Write

Active (ICC)

L

H

H

High Z

Selected, Outputs Disabled

Active (ICC)

Ordering Information

Speed

 

Package

Package Type

Operating

(ns)

Ordering Code

Diagram

Range

 

10

CY7C106D-10VXI

51-85032

28-pin (400-Mil) Molded SOJ (Pb-free)

Industrial

 

 

 

 

 

 

CY7C1006D-10VXI

51-85031

28-pin (300-Mil) Molded SOJ (Pb-free)

 

 

 

 

 

 

Please contact your local Cypress sales representative for availability of these parts.

Document #: 38-05459 Rev. *E

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Cypress CY7C106D, CY7C1006D manual Truth Table, Ordering Information, Input/Output Mode Power

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.