CY7C106D
CY7C1006D
Document #: 38-05459 Rev. *E Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on VCC Relative to GND [3]... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [3]...................................–0.5V to VCC + 0.5V
DC Input Voltage [3]...............................–0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage ..........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range Ambient
Temper atur e VCC Speed
Industrial –40°C to +85°C 5V ± 0.5V 10 ns
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
7C106D-10
7C1006D-10 Unit
Min Max
VOH Output HIGH Voltage IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage [3] –0.5 0.8 V
IIX Input Leakage Current GND < VI < VCC –1 +1 µA
IOZ Output Leakage Current GND < VI < VCC, Output Disabled –1 +1 µA
ICC VCC Operating Supply Current VCC = Max,
IOUT = 0 mA,
f = fmax = 1/tRC
100 MHz 80 mA
83 MHz 72 mA
66 MHz 58 mA
40 MHz 37 mA
ISB1 Automatic CE Power-Down
Current—TTL Inputs
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fmax
10 mA
ISB2 Automatic CE Power-Down
Current—CMOS Inputs
Max VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V, f=0
3mA
Note
3. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
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