CY7C106D

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1006D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching Characteristics (Over the Operating Range) [6]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7C106D-10

 

 

Parameter

 

 

 

 

 

 

 

Description

 

7C1006D-10

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tpower [7]

VCC(typical) to the first access

100

 

 

 

s

tRC

 

Read Cycle Time

10

 

 

 

ns

tAA

 

Address to Data Valid

 

 

10

 

ns

tOHA

 

Data Hold from Address Change

3

 

 

 

ns

tACE

 

 

 

 

 

LOW to Data Valid

 

 

10

 

ns

 

CE

 

tDOE

 

 

 

 

 

LOW to Data Valid

 

 

5

 

ns

 

OE

 

tLZOE

 

 

 

 

 

LOW to Low Z

0

 

 

 

ns

 

OE

 

 

tHZOE

 

 

 

 

 

HIGH to High Z [8, 9]

 

 

5

 

ns

 

OE

 

tLZCE

 

 

 

LOW to Low Z [9]

3

 

 

 

ns

 

CE

 

 

tHZCE

 

 

 

HIGH to High Z [8, 9]

 

 

5

 

ns

 

CE

 

tPU [10]

 

 

 

LOW to Power-Up

0

 

 

 

ns

 

CE

 

 

tPD [10]

 

 

 

HIGH to Power-Down

 

 

10

 

ns

 

CE

 

Write Cycle [11,

12]

 

 

 

 

 

tWC

 

Write Cycle Time

10

 

 

 

ns

tSCE

 

 

 

LOW to Write End

7

 

 

 

ns

 

CE

 

 

tAW

 

Address Set-Up to Write End

7

 

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

 

ns

tSA

 

Address Set-Up to Write Start

0

 

 

 

ns

tPWE

 

 

 

 

 

Pulse Width

7

 

 

 

ns

 

WE

 

 

tSD

 

Data Set-Up to Write End

6

 

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

 

ns

tLZWE

 

 

 

 

 

HIGH to Low Z [9]

3

 

 

 

ns

 

WE

 

 

tHZWE

 

 

 

 

 

LOW to High Z [8, 9]

 

 

5

 

ns

 

WE

 

Notes

6.Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance.

7.tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.

8.tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of “AC Test Loads and Waveforms [5]” on page 4. Transition is measured when the outputs enter a high impedance state.

9.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

10.This parameter is guaranteed by design and is not tested.

11.The internal write time of the memory is defined by the overlap of CE and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.

Document #: 38-05459 Rev. *E

Page 5 of 11

[+] Feedback

Page 5
Image 5
Cypress CY7C1006D, CY7C106D manual Parameter Description, Min Max Read Cycle

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.