CY7C106DCY7C1006D
Document #: 38-05459 Rev. *E Page 6 of 11
Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min Max Unit

VDR VCC for Data Retention 2.0 V

ICCDR Data Retention Current VCC = VDR = 2.0V, CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V

3mA

tCDR [4] Chip Deselect to Data Retention Time 0 ns

tR [13, 14] Operation Recovery Time tRC ns

Data Retention Waveform

4.5V4.5V
tCDR
VDR>2V
DATA RETENTION MODE
tR
CE
V
CC

Switching Waveforms

Read Cycle No.1 (Address Transition Controlled) [15, 16]

Read Cycle No. 2 (OE Controlled) [16, 17]

PREVIOUS DATA VALID DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
IMPEDANCE
ICC
ISB
HIGH
ADDRESS
CE
DATA OUT
VCC
SUPPLY
CURRENT
OE
Notes
13.Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.
14.tr < 3 ns for all speeds.
15.Device is continuously selected, OE and CE = VIL.
16.WE is HIGH for read cycle.
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