Cypress CY7C1333H manual Maximum Ratings, Operating Range, Thermal Resistance11

PRELIMINARYCY7C1333H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature –65°C to +150°C

Current into Outputs (LOW)	20 mA
Static Discharge Voltage	> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current	> 200 mA

Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		...... –0.5V to +4.6V
DC Voltage Applied to Outputs
in Tri-State	–0.5V to VDDQ + 0.5V
DC Input Voltage	–0.5V to VDD + 0.5V

Electrical Characteristics Over the Operating Range [9,10]

Operating Range

	Ambient
Range	Temperature (TA)	VDD	VDDQ
Com’l	0°C to +70°C	3.3V – 5%/+10%	3.3V – 5% to
			VDD
Ind’l	-40°C to +85°C

Parameter	Description	Test Conditions		Min.	Max.	Unit
VDD	Power Supply Voltage			3.135	3.6	V
VDDQ	I/O Supply Voltage	for 3.3V I/O		3.135	VDD	V
VOH	Output HIGH Voltage	for 3.3V I/O, IOH = –4.0 mA		2.4		V
VOL	Output LOW Voltage	for 3.3V I/O, IOL = 8.0 mA			0.4	V
VIH	Input HIGH Voltage	for 3.3V I/O		2.0	VDD + 0.3V	V
VIL	Input LOW Voltage[9]	for 3.3V I/O		–0.3	0.8	V
IX	Input Load Current (except	GND ≤ VI ≤ VDDQ		–5	5	µA
	ZZ and MODE)
	Input Current of MODE	Input = VSS		–30		µA
		Input = VDD			5	µA
	Input Current of ZZ	Input = VSS		–5		µA
		Input = VDD			30	µA
IOZ	Output Leakage Current	GND ≤ VI ≤ VDD, Output Disabled		–5	5	µA
IDD	VDD Operating Supply	VDD = Max., IOUT = 0 mA,	7.5-ns cycle, 133 MHz		225	mA
	Current	f = fMAX= 1/tCYC	10-ns cycle, 100 MHz		205	mA
ISB1	Automatic CE Power-down	VDD = Max, Device Deselected,	7.5-ns cycle, 133 MHz		90	mA
	Current—TTL Inputs	VIN ≥ VIH or VIN ≤ VIL, f = fMAX,	10-ns cycle, 100 MHz		80	mA
		inputs switching
ISB2	Automatic CE Power-down	VDD = Max, Device Deselected,	All speeds		40	mA
	Current—CMOS Inputs	VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
		f = 0, inputs static
ISB3	Automatic CE Power-down	VDD = Max, Device Deselected,	7.5-ns cycle, 133 MHz		75	mA
	Current—CMOS Inputs	VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V,	10-ns cycle, 100 MHz		65	mA
		f = fMAX, inputs switching
ISB4	Automatic CE Power-down	VDD = Max, Device Deselected,	All speeds		45	mA
	Current—TTL Inputs	VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
		f = 0, inputs static

Thermal Resistance[11]

	Parameters	Description	Test Conditions	100 TQFP	Unit
				Package
	ΘJA	Thermal Resistance	Test conditions follow standard test methods and	30.32	°C/W
		(Junction to Ambient)	procedures for measuring thermal impedance,
			per EIA/JESD51
	ΘJC	Thermal Resistance		6.85	°C/W
		(Junction to Case)
	Notes:
	9. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
	10. Power-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
	11. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-00209 Rev. **				Page 7 of 12

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