36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL™ Architecture

CY7C1460AV25

CY7C1462AV25

CY7C1464AV25

CypressSemiconductor Corporation 198 Champion Court San Jose,CA 95134-1709 408-943-2600
Document #: 38-05354 Rev. *D Revised June 22, 2006

Features

Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Available speed grades are 250, 200 and 167 MHz
Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
Fully registered (inputs and outputs) for pipelined
operation
Byte Write capability
2.5V core power supply
2.5V/1.8V I/O power supply
Fast clock-to-output times
2.6 ns (for 250-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1460AV25, CY7C1462AV25 available in
JEDEC-standard lead-free 100-pin TQFP package,
lead-free and non-lead-free 165-ball FBGA package.
CY7C1464AV25 available in lead-free and non-lead-free
209-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option

Functional Description

The CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 are
2.5V, 1M x 36/2M x 18/512 x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back
Read/Write operations with no wait states. The
CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The
CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 are
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle. Write operations are controlled by the
Byte Write Selects (BWa–BWh for CY7C1464AV25,
BWa–BWd for CY7C1460AV25 and BWa–BWb for
CY7C1462AV25) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
A0, A1, A
C
MODE
BW
a
BW
b
WE
CE1
CE2
CE3
OE
READ LOGIC
DQs
DQP
a
DQP
b
DQP
c
DQP
d
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
MEMORY
ARRAY
E
E
INPUT
REGISTER 0
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1 WRITE ADDRESS
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BURST
LOGIC
A0'
A1'
D1
D0
Q1
Q0
A0
A1
C
ADV/LD
ADV/LD
E
INPUT
REGISTER 1
S
E
N
S
E
A
M
P
S
E
CLK
C
EN
WRITE
DRIVERS
BW
c
BW
d
ZZ SLEEP
CONTROL
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S

Logic Block Diagram–CY7C1460AV25 (1M x 36)

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