CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
Document #: 38-05354 Rev. *D Page 17 of 27
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on VDD Relative to GND........–0.5V to +3.6V
Supply Voltage on VDDQ Relative to GND......–0.5V to +VDD
DC to Outputs in Tri-State...................–0.5V to VDDQ + 0.5V
DC Input Voltage....................................–0.5V to VDD + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range Ambient
Tempe ratu re VDD VDDQ
Commercial 0°C to +70°C 2.5V –5%/+5% 1.7V to VDD
Industrial –40°C to +85°C
Electrical Characteristics Over the Operating Range[14, 15]
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
VDD Power Supply Voltage 2.375 2.625 V
VDDQ I/O Supply Voltage for 2.5V I/O 2.375 VDD V
for 1.8V I/O 1.7 1.9 V
VOH Output HIGH Voltage for 2.5V I/O, IOH = −1.0 mA 2.0 V
for 1.8V I/O, IOH = –100 µA1.6V
VOL Output LOW Voltage for 2.5V I/O, IOL = 1.0 mA 0.4 V
for 1.8V I/O, IOL = 100 µA, 0.2 V
VIH Input HIGH Voltage[14] for 2.5V I/O 1.7 VDD + 0.3V V
for 1.8V I/O 1.26 VDD + 0.3V V
VIL Input LOW Voltage[14] for 2.5V I/O –0.3 0.7 V
for 1.8V I/O –0.3 0.36 V
IXInput Leakage Current
except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5 µA
Input Current of MODE Input = VSS –30 µA
Input = VDD 5µA
Input Current of ZZ Input = VSS –5 µA
Input = VDD 30 µA
IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5 µA
IDD VDD Operating Supply VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 435 mA
5-ns cycle, 200 MHz 385 mA
6-ns cycle, 167 MHz 335 mA
ISB1 Automatic CE
Power-down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = fMAX =
1/tCYC
All speed grades 185 mA
ISB2 Automatic CE
Power-down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
f = 0
All speed grades 120 mA
ISB3 Automatic CE
Power-down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
f = fMAX = 1/tCYC
All speed grades 160 mA
ISB4 Automatic CE
Power-down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0 All speed grades 135 mA
Notes:
14.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
15.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
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