Cypress CY7C1460AV25, CY7C1464AV25, CY7C1462AV25 Maximum Ratings, Operating Range, Ambient Range

CY7C1460AV25

CY7C1462AV25

CY7C1464AV25

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.5V to +3.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to +VDD
DC to Outputs in Tri-State	–0.5V to VDDQ + 0.5V
DC Input Voltage	–0.5V to VDD + 0.5V

Current into Outputs (LOW)			20 mA
Static Discharge Voltage			> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current			> 200 mA
Operating Range
	Ambient
Range	Temperature	VDD	VDDQ
Commercial	0°C to +70°C	2.5V –5%/+5%	1.7V to VDD
Industrial	–40°C to +85°C

Electrical Characteristics Over the Operating Range[14, 15]

DC Electrical Characteristics Over the Operating Range

Parameter		Description	Test Conditions		Min.	Max.	Unit
VDD		Power Supply Voltage			2.375	2.625	V
VDDQ		I/O Supply Voltage	for 2.5V I/O		2.375	VDD	V
			for 1.8V I/O		1.7	1.9	V
VOH		Output HIGH Voltage	for 2.5V I/O, IOH = −1.0 mA		2.0		V
			for 1.8V I/O, IOH = –100 ∝A		1.6		V
VOL		Output LOW Voltage	for 2.5V I/O, IOL = 1.0 mA			0.4	V
			for 1.8V I/O, IOL = 100 ∝A,			0.2	V
V	IH	Input HIGH Voltage[14]	for 2.5V I/O		1.7	V + 0.3V	V
						DD
			for 1.8V I/O		1.26	VDD + 0.3V	V
VIL		Input LOW Voltage[14]	for 2.5V I/O		–0.3	0.7	V
			for 1.8V I/O		–0.3	0.36	V
IX		Input Leakage Current	GND ≤ VI ≤ VDDQ		–5	5	∝A
		except ZZ and MODE
		Input Current of MODE	Input = VSS		–30		∝A
			Input = VDD			5	∝A
		Input Current of ZZ	Input = VSS		–5		∝A
			Input = VDD			30	∝A
IOZ		Output Leakage Current	GND ≤ VI ≤ VDDQ, Output Disabled		–5	5	∝A
IDD		VDD Operating Supply	VDD = Max., IOUT = 0 mA,	4-ns cycle, 250 MHz		435	mA
			f = fMAX = 1/tCYC
				5-ns cycle, 200 MHz		385	mA
				6-ns cycle, 167 MHz		335	mA
ISB1		Automatic CE	Max. VDD, Device Deselected,	All speed grades		185	mA
		Power-down	VIN ≥ VIH or VIN ≤ VIL, f = fMAX =
		Current—TTL Inputs	1/tCYC
ISB2		Automatic CE	Max. VDD, Device Deselected,	All speed grades		120	mA
		Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
		Current—CMOS Inputs	f = 0
ISB3		Automatic CE	Max. VDD, Device Deselected,	All speed grades		160	mA
		Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
		Current—CMOS Inputs	f = fMAX = 1/tCYC
ISB4		Automatic CE	Max. VDD, Device Deselected,	All speed grades		135	mA
		Power-down	VIN ≥ VIH or VIN ≤ VIL, f = 0
		Current—TTL Inputs

Notes:

14.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).

15.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05354 Rev. *D Page 17 of 27

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