CY8C24123
CY8C24223, CY8C24423
Document Number: 38-12011 Rev. *G Page 17 of 43
DC Electrical Characteristics
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C ≤ TA ≤ 85°C, or 3.0V to 3.6V and -40°C ≤ TA ≤ 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and
are for design guidance only or unless otherwise specified.
Table 13. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply Voltage 3.00 –5.25 V
IDD Supply Current – 5 8 mA Conditions are Vdd = 5.0V, 25 oC,
CPU = 3 MHz, 48 MHz disabled. VC1
= 1.5 MHz, VC2 = 93.75 kHz,
VC3 = 93.75 kHz.
IDD3 Supply Current –3.3 6.0 mA Conditions are Vdd = 3.3V, TA = 25
oC, CPU = 3 MHz, 48 MHz =
Disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz.
ISB Sleep (Mode) Current with POR, LVD,
Sleep Timer, and WDT.a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This must be compared with device s that have similar
functions enabled.
– 3 6.5 μAConditions are with internal slow
speed oscillator, Vdd = 3.3V, -40 oC
<= TA <= 55 oC.
ISBH Sleep (Mode) Current with POR, LVD,
Sleep Timer, and WDT at high temper-
ature.a
– 4 25 μAConditions are with internal slow
speed oscillator, Vdd = 3.3V,
55 oC < TA <= 85 oC.
ISBXTL Sleep (Mode) Current with POR, LVD,
Sleep Timer, WDT, and external crystal.a– 4 7.5 μAConditions are with prop erly loaded,
1 μW max, 32.768 kHz crystal. Vdd
= 3.3V, -40 oC <= TA <= 55 oC.
ISBXTLH Sleep (Mode) Current with POR, LVD,
Sleep Timer, WDT, and external crystal at
high temperature.a
– 5 26 μAConditions are with properly loaded,
1μW max, 32.768 kHz crystal.
Vdd = 3.3 V, 55 oC < TA <= 85 oC.
VREF Reference Voltage (Bandgap) 1.275 1.3 1.325 VTrimmed for appropriate Vdd.
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