Freescale Semiconductor Block Guide, EETX4K Section 1 Introduction

Block Guide — S12EETX4KV0 V00.04

Section 1 Introduction

This document describes the EETX4K module which includes a 4K byte EEPROM (Non-Volatile)

memory. The EEPROM memory may be read as either bytes, aligned words or misaligned words. Read

access time is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words.

The EEPROM memory is ideal for data storage for single-supply applications allowing for field

reprogramming without requiring external voltage sources for program or erase. Program and erase

functions are controlled by a command driven interface. The EEPROM module supports both block erase

(allmemory bytes) and sector erase (4 memory bytes). An erased bit reads ‘1’ and a programmed bit reads

‘0’.The high voltage required to program and erase the EEPROM memory is generated internally. It is not

possible to read from the EEPROM block while it is being erased or programmed.

NOTE:

AnEEPROM word (2 bytes) must be erased before being programmed. Cumulative

programming of bits within a word is not allowed.

A three-step MCU instruction sequence to execute built-in algorithms (including program and erase) on

the EEPROM memory.

• 4K bytes of EEPROM memory divided into 1024 sectors of 4 bytes.

• Automated program and erase algorithm.

• Interrupts on EEPROM command completion and command buffer empty.

• Fast sector erase and word program operation.

• 2-stage command pipeline.

• Sector erase abort feature for critical interrupt response.

• Flexible protection scheme to prevent accidental program or erase.

• Single power supply for all EEPROM operations including program and erase.

• Program, erase and erase verify operations (please refer to section 4.1 for details).

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