MSI Z77A-G45 manual Chapter

MS-7752

▶tRP

Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge. If insufficient time is allowed for RAS to accumulate before DRAM refresh, the DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system.

▶tRAS

Determines the time RAS (row address strobe) takes to read from and write to mem- ory cell.

▶tRFC

This setting determines the time RFC takes to read from and write to a memory cell.

▶tWR

Determines minimum time interval between end of write data burst and the start of a pre-charge command. Allows sense amplifiers to restore data to cell.

▶tWTR

Determines minimum time interval between the end of write data burst and the start of a column-read command; allows I/O gating to overdrive sense amplifies before read command starts.

▶tRRD

Specifies the active-to-active delay of different banks.

▶tRTP

Time interval between a read and a precharge command.

▶tFAW

This item is used to set the tFAW (four activate window delay) timing.

▶tWCL

This item is used to set the tWCL (Write CAS Latency) timing.

▶tCKE

This item is used to set the Pulse Width for DRAM module.

▶tRTL

This item is used to set Round Trip Latency settings.

▶Advanced Channel 1/ 2 Timing Configuration

Press <Enter> to enter the sub-menu. And you can set the advanced memory timing for each channel.

▶GT OverClocking

This item allows you to enable/ disable the overclocking of integrated graphics.

▶GT Ratio

This setting controls the ratio of integrated graphics frequency to enable the integrated graphics to run at different frequency combinations.

▶Adjusted GT Frequency

It shows the iGPU frequency. Read-only.

Chapter 2

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