Installing and Configuring the NVIDIA nForce 650i Ultra Motherboard
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Memory Timing This section of the Adjust Motherboard Settings allows you to adjust
various memory timings and cycles.
Row Address Strobe
Adjusts the minimum RAS active time. This is the amount of time
between a row being activated by Precharge and deactivated. A
row cannot be deactivated until tRAS has completed. The lower
this value, the faster the performance. However, if it is set too low
it can cause data corruption by deactivating the row to soon.
Adjustable from 1 to 63.
Write Recovery Time
Memory timing that determines the delay between a write
command and a Precharge command is set to the same bank of
memory. Adjustable from 1 to 15.
W to R Termination Turnaround
The Write-to-Read time is the number of clock cycles between the
last write data pair and the subsequent READ command to the
same physical block. Adjustable from 1 to 15.
RAS to CAS access
The RAS-to-CAS access (tRCD) is the amount of time in cycles for
Clicking on View SPD… displays a
memory information window. This is
for information only and is not editable.
When you select an option, information explaining
the selection is displayed in the area below the
Memory Timing box.