NXP Semiconductors TDA8932B Vi= 100 mV (RMS); Ri=0; Cse = 1000 F (1) VP= 30 V; RL=28 (2) VP= 22 V; RL=24, Vripple = 500 mV (RMS) referenced to ground; Ri=0 (shorted input) (1) VP=30V; R, (2) VP=22V; R, Ri=0; 20 kHz brick-wall lter AES17 (1) VP= 22 V; RL=24 (2) VP= 30 V; RL=28, Po= 1 W; CHVPREF =47F, (2) VP=30V; R

TDA8932B_3 © NXP B.V. 21 June 2007. All rights reserved.
Product data sheet Rev. 03— 21 June 2007 30 of 48
NXP Semiconductors TDA8932B
Class-D audio amplifier
Vi= 100 mV (RMS); Ri=0Ω; Cse = 1000 µF
(1) VP= 30 V; RL=2×8Ω
(2) VP= 22 V; RL=2×4Ω
Vripple = 500 mV (RMS) referenced to ground;
Ri=0Ω (shorted input)
(1) VP=30V; R
L=2×8Ω
(2) VP=22V; R
L=2×4Ω
Fig 15. Gain as a function of frequency Fig 16. Supply voltage ripple rejection as a function of
frequency
001aad776
20
30
40
Gv
(dB)
10
fi (Hz)
10 105
104 102103
(1)
(2)
001aad777
−60
−40
−80
−20
0
SVRR
(dB)
−100
fi (Hz)
10 105
104 102103
(1)
(2)
Ri=0Ω; 20 kHz brick-wall filter AES17
(1) VP= 22 V; RL=2×4Ω
(2) VP= 30 V; RL=2×8Ω
Po= 1 W; CHVPREF =47µF
(1) VP=22V; R
L=2×4Ω
(2) VP=30V; R
L=2×8Ω
Fig 17. Signal-to-noise ratio as a function of output
power per channel Fig 18. Channel separation as a function of frequency
001aad778
Po (W/channel)
10−2102
1010−11
40
80
120
S/N
(dB)
0
(2)
(1)
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−60
−40
−80
−20
0
αcs
(dB)
−100
fi (Hz)
10 105
104 102103
(1)
(2)